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Paper Abstract and Keywords
Presentation 2017-02-24 10:25
Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices
Tokinobu Watanabe (Shizuoka Univ./Univ. Toyama), Hori Masahiro, Ono Yukinori (Shizuoka Univ.) ED2016-131 SDM2016-148
Abstract (in Japanese) (See Japanese page) 
(in English) Time-domain charge pumping, which monitors transient currents during the charge pumping process, was applied to silicon-on-insulator (SOI) MOS gated p–i–n diodes. We found that the transient electron current is strongly dependent on the polarity of the back (substrate) gate. Specifically, when the back gate is positively biased, the current peak caused by the electron trap to the interface defects was found to disappear (or significantly weaken), which was attributed to the charging effects of the trapped electrons. The present results reveal the importance of the formation of the back channel and provide important information for further detailed analysis of the charge pumping process in SOI MOS devices.
Keyword (in Japanese) (See Japanese page) 
(in English) charge pumping / time-domain / interface defects / SOI / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 472, SDM2016-148, pp. 7-12, Feb. 2017.
Paper # SDM2016-148 
Date of Issue 2017-02-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-131 SDM2016-148

Conference Information
Committee ED SDM  
Conference Date 2017-02-24 - 2017-02-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Centennial Hall, Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To SDM 
Conference Code 2017-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Time-domain charge pumping on silicon-on-insulator metal-oxide-semiconductor devices 
Sub Title (in English)  
Keyword(1) charge pumping  
Keyword(2) time-domain  
Keyword(3) interface defects  
Keyword(4) SOI  
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1st Author's Name Tokinobu Watanabe  
1st Author's Affiliation Shizuoka University/University of Toyama (Shizuoka Univ./Univ. Toyama)
2nd Author's Name Hori Masahiro  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Ono Yukinori  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-3 
Date Time 2017-02-24 10:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2016-131, SDM2016-148 
Volume (vol) vol.116 
Number (no) no.471(ED), no.472(SDM) 
Page pp.7-12 
#Pages 6 
Date of Issue 2017-02-17 (ED, SDM) 

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