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Paper Abstract and Keywords
Presentation 2017-04-20 16:10
[Invited Talk] A 512Gb 3b/Cell Flash Memory on 64-Word-Line-Layer BiCS Technology
Ryuji Yamashita, Sagar Magia (WDC), Tsutomu Higuchi, Kazuhide Yoneya, Toshio Yamamura (Toshiba), Hiroyuki Mizukoshi, Shingo Zaitsu, Minoru Yamashita, Shunichi Toyama, Norihiro Kamae, Juan Lee, Shuo Chen, Jiawei Tao, William Mak, Xiaohua Zhang (WDC) ICD2017-9
Abstract (in Japanese) (See Japanese page) 
(in English) A 512Gb 3b/cell flash has been developed on a 64-WL-layer BiCS technology. By using a four-block-EOC row decoding approach, row decoder area is reduced by 18%, which translates to a 1.3% die size reduction. With additional layout area reduction techniques, a 132mm2 die size and 3.88Gb/mm2 bit density have been achieved. SBL current sensing achieved a 64μs tR with an 8KB page size, which is 20% less than a conventional 16KB-page ABL. USP operation expanded the Vt window by 15%, which has significantly improved endurance and reliability. This work confirms that it is possible to meet market requirements for bit density, cost, performance, and reliability with this 3D-flash technology.
Keyword (in Japanese) (See Japanese page) 
(in English) 3D-flash / BiCS / 64-word-line-layer / NAND flash memory / Non-volatile memory / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 9, ICD2017-9, pp. 45-50, April 2017.
Paper # ICD2017-9 
Date of Issue 2017-04-13 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2017-04-20 - 2017-04-21 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2017-04-ICD 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 512Gb 3b/Cell Flash Memory on 64-Word-Line-Layer BiCS Technology 
Sub Title (in English)  
Keyword(1) 3D-flash  
Keyword(2) BiCS  
Keyword(3) 64-word-line-layer  
Keyword(4) NAND flash memory  
Keyword(5) Non-volatile memory  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryuji Yamashita  
1st Author's Affiliation Western Digital (WDC)
2nd Author's Name Sagar Magia  
2nd Author's Affiliation Western Digital (WDC)
3rd Author's Name Tsutomu Higuchi  
3rd Author's Affiliation Toshiba (Toshiba)
4th Author's Name Kazuhide Yoneya  
4th Author's Affiliation Toshiba (Toshiba)
5th Author's Name Toshio Yamamura  
5th Author's Affiliation Toshiba (Toshiba)
6th Author's Name Hiroyuki Mizukoshi  
6th Author's Affiliation Western Digital (WDC)
7th Author's Name Shingo Zaitsu  
7th Author's Affiliation Western Digital (WDC)
8th Author's Name Minoru Yamashita  
8th Author's Affiliation Western Digital (WDC)
9th Author's Name Shunichi Toyama  
9th Author's Affiliation Western Digital (WDC)
10th Author's Name Norihiro Kamae  
10th Author's Affiliation Western Digital (WDC)
11th Author's Name Juan Lee  
11th Author's Affiliation Western Digital (WDC)
12th Author's Name Shuo Chen  
12th Author's Affiliation Western Digital (WDC)
13th Author's Name Jiawei Tao  
13th Author's Affiliation Western Digital (WDC)
14th Author's Name William Mak  
14th Author's Affiliation Western Digital (WDC)
15th Author's Name Xiaohua Zhang  
15th Author's Affiliation Western Digital (WDC)
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Speaker Author-1 
Date Time 2017-04-20 16:10:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2017-9 
Volume (vol) vol.117 
Number (no) no.9 
Page pp.45-50 
#Pages
Date of Issue 2017-04-13 (ICD) 


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