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Paper Abstract and Keywords
Presentation 2017-04-21 13:25
[Invited Lecture] Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ)
Marina Yamaguchi, Shosuke Fujii, Yuuichi Kamimuta, Tsunehiro Ino, Riichiro Takaishi, Yasushi Nakasaki, Masumi Saitoh (Toshiba) ICD2017-16
Abstract (in Japanese) (See Japanese page) 
(in English) In recent years, two remarkable progresses have been made on ferroelectric materials and devices. One is the demonstration of ferroelectric tunnel junction (FTJ) which can readout the polarization states non-destructively. Another progress is the discovery of ferroelectricity of HfO2, the most common high-k material in advanced CMOS devices. By combining these progresses, novel ferroelectric HfO2-based tunnel junction, HfO2 FTJ, is expected to be achieved. We established a solid guideline for performance improvement and demonstrated, for the first time, successful operation of the HfO2 FTJ. And we found that HfO2 FTJ has several characteristics superior to those of the other emerging memories.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric Tunnel Junction / FTJ / HfO2 / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 9, ICD2017-16, pp. 85-88, April 2017.
Paper # ICD2017-16 
Date of Issue 2017-04-13 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2017-04-20 - 2017-04-21 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2017-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Demonstration of HfO2-Based Ferroelectric Tunnel Junction (FTJ) 
Sub Title (in English)  
Keyword(1) Ferroelectric Tunnel Junction  
Keyword(2) FTJ  
Keyword(3) HfO2  
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1st Author's Name Marina Yamaguchi  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Shosuke Fujii  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
3rd Author's Name Yuuichi Kamimuta  
3rd Author's Affiliation Toshiba Corporation (Toshiba)
4th Author's Name Tsunehiro Ino  
4th Author's Affiliation Toshiba Corporation (Toshiba)
5th Author's Name Riichiro Takaishi  
5th Author's Affiliation Toshiba Corporation (Toshiba)
6th Author's Name Yasushi Nakasaki  
6th Author's Affiliation Toshiba Corporation (Toshiba)
7th Author's Name Masumi Saitoh  
7th Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2017-04-21 13:25:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2017-16 
Volume (vol) vol.117 
Number (no) no.9 
Page pp.85-88 
#Pages 4 
Date of Issue 2017-04-13 (ICD) 

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