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Paper Abstract and Keywords
Presentation 2017-06-20 15:15
Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate
Rumi Takayama, Takuya Hoshii (Tokyo Inst. of Tech.), Akira Nakajima (AIST), Shinichi Nishizawa (Kyushu Univ.), Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui (Tokyo Inst. of Tech.) SDM2017-27
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
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Reference Info. IEICE Tech. Rep., vol. 117, no. 101, SDM2017-27, pp. 31-34, June 2017.
Paper # SDM2017-27 
Date of Issue 2017-06-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2017-06-20 - 2017-06-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Campus Innovation Center Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2017-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Capacitance Analyses of p-ch GaN MOS Structure on Polarization ― Junction Substrate 
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1st Author's Name Rumi Takayama  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Takuya Hoshii  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
3rd Author's Name Akira Nakajima  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Shinichi Nishizawa  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
5th Author's Name Hiromichi Ohashi  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
6th Author's Name Kuniyuki Kakushima  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
7th Author's Name Hitoshi Wakabayashi  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
8th Author's Name Kazuo Tsutsui  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Speaker Author-1 
Date Time 2017-06-20 15:15:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2017-27 
Volume (vol) vol.117 
Number (no) no.101 
Page pp.31-34 
#Pages 4 
Date of Issue 2017-06-13 (SDM) 

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