Paper Abstract and Keywords |
Presentation |
2017-08-01 13:50
Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage Takuya Yamaguchi, Tatsuya Oku, Kawori Sekine (Meiji Univ.) SDM2017-41 ICD2017-29 Link to ES Tech. Rep. Archives: SDM2017-41 ICD2017-29 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A MOSFET has a temperature dependence of threshold voltage and mobility. In this paper, we focused on threshold voltage and propose an equivalent MOSFET circuit where temperature dependence of threshold voltage is reduced. Proposal circuit consists of PTAT voltage generator circuits and level-shift circuits to reduce temperature dependence of threshold voltage. The proposed circuit was fabricated with 0.18μm n-well CMOS process and measured. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOSFET / temperature characteristic / threshold voltage / PTAT generator / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 167, ICD2017-29, pp. 77-82, July 2017. |
Paper # |
ICD2017-29 |
Date of Issue |
2017-07-24 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2017-41 ICD2017-29 Link to ES Tech. Rep. Archives: SDM2017-41 ICD2017-29 |
Conference Information |
Committee |
SDM ICD ITE-IST |
Conference Date |
2017-07-31 - 2017-08-02 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido-Univ. Multimedia Education Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications |
Paper Information |
Registration To |
ICD |
Conference Code |
2017-07-SDM-ICD-IST |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage |
Sub Title (in English) |
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Keyword(1) |
MOSFET |
Keyword(2) |
temperature characteristic |
Keyword(3) |
threshold voltage |
Keyword(4) |
PTAT generator |
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1st Author's Name |
Takuya Yamaguchi |
1st Author's Affiliation |
Meiji University (Meiji Univ.) |
2nd Author's Name |
Tatsuya Oku |
2nd Author's Affiliation |
Meiji University (Meiji Univ.) |
3rd Author's Name |
Kawori Sekine |
3rd Author's Affiliation |
Meiji University (Meiji Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-08-01 13:50:00 |
Presentation Time |
25 minutes |
Registration for |
ICD |
Paper # |
SDM2017-41, ICD2017-29 |
Volume (vol) |
vol.117 |
Number (no) |
no.166(SDM), no.167(ICD) |
Page |
pp.77-82 |
#Pages |
6 |
Date of Issue |
2017-07-24 (SDM, ICD) |
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