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Paper Abstract and Keywords
Presentation 2017-08-01 13:50
Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage
Takuya Yamaguchi, Tatsuya Oku, Kawori Sekine (Meiji Univ.) SDM2017-41 ICD2017-29
Abstract (in Japanese) (See Japanese page) 
(in English) A MOSFET has a temperature dependence of threshold voltage and mobility. In this paper, we focused on threshold voltage and propose an equivalent MOSFET circuit where temperature dependence of threshold voltage is reduced. Proposal circuit consists of PTAT voltage generator circuits and level-shift circuits to reduce temperature dependence of threshold voltage. The proposed circuit was fabricated with 0.18μm n-well CMOS process and measured.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / temperature characteristic / threshold voltage / PTAT generator / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 167, ICD2017-29, pp. 77-82, July 2017.
Paper # ICD2017-29 
Date of Issue 2017-07-24 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-41 ICD2017-29

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2017-07-31 - 2017-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido-Univ. Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To ICD 
Conference Code 2017-07-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of equivalent MOSFET reduced temperature dependence of threshold voltage 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) temperature characteristic  
Keyword(3) threshold voltage  
Keyword(4) PTAT generator  
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1st Author's Name Takuya Yamaguchi  
1st Author's Affiliation Meiji University (Meiji Univ.)
2nd Author's Name Tatsuya Oku  
2nd Author's Affiliation Meiji University (Meiji Univ.)
3rd Author's Name Kawori Sekine  
3rd Author's Affiliation Meiji University (Meiji Univ.)
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Speaker Author-1 
Date Time 2017-08-01 13:50:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # SDM2017-41, ICD2017-29 
Volume (vol) vol.117 
Number (no) no.166(SDM), no.167(ICD) 
Page pp.77-82 
#Pages 6 
Date of Issue 2017-07-24 (SDM, ICD) 

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