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Paper Abstract and Keywords
Presentation 2017-08-02 11:35
Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting
Shun Momose, Jiro Ida, Takayuki Mori, Takahiro Yoshida, Junpei Iwata, Takashi Horii, Takahiro Furuta, Takuya Yamada, Daichi Takamatsu, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2017-45 ICD2017-33
Abstract (in Japanese) (See Japanese page) 
(in English) The gate controlled diode characteristics with our newly super steep subthreshold slope (SS) “PN-Bode Tied SOI FET” was shown for the first time. It shows the low leakage current. We found that the Excellent On-characteristics with an input voltage sufficiently lower than conventional diode. We showed that it is possible to optimize GCD by reviewing gate length and gate width of PN-Body Tied SOI FET`s whose threshold is controlled to around 0V. A rectenna by using high impedance antenna, the possibility of shown input power of micro watt below could be rectified.
Keyword (in Japanese) (See Japanese page) 
(in English) Subthreshold Slope / SOI MOSFET / RF Energy Harvesting / GCD / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 166, SDM2017-45, pp. 109-114, July 2017.
Paper # SDM2017-45 
Date of Issue 2017-07-24 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-45 ICD2017-33

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2017-07-31 - 2017-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido-Univ. Multimedia Education Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2017-07-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Gate Controlled Diode Characteristics of Super Steep Subthreshold slope PN-Body Tied SOI-FET for high Efficiency RF Energy Harvesting 
Sub Title (in English)  
Keyword(1) Subthreshold Slope  
Keyword(2) SOI MOSFET  
Keyword(3) RF Energy Harvesting  
Keyword(4) GCD  
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1st Author's Name Shun Momose  
1st Author's Affiliation Kanazawa institute of Technology (KIT)
2nd Author's Name Jiro Ida  
2nd Author's Affiliation Kanazawa institute of Technology (KIT)
3rd Author's Name Takayuki Mori  
3rd Author's Affiliation Kanazawa institute of Technology (KIT)
4th Author's Name Takahiro Yoshida  
4th Author's Affiliation Kanazawa institute of Technology (KIT)
5th Author's Name Junpei Iwata  
5th Author's Affiliation Kanazawa institute of Technology (KIT)
6th Author's Name Takashi Horii  
6th Author's Affiliation Kanazawa institute of Technology (KIT)
7th Author's Name Takahiro Furuta  
7th Author's Affiliation Kanazawa institute of Technology (KIT)
8th Author's Name Takuya Yamada  
8th Author's Affiliation Kanazawa institute of Technology (KIT)
9th Author's Name Daichi Takamatsu  
9th Author's Affiliation Kanazawa institute of Technology (KIT)
10th Author's Name Kenji Itoh  
10th Author's Affiliation Kanazawa institute of Technology (KIT)
11th Author's Name Koichiro Ishibashi  
11th Author's Affiliation The University of Electro-Communications (UEC)
12th Author's Name Yasuo Arai  
12th Author's Affiliation High Energy Accelerator Research Organization (KEK)
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Speaker Author-1 
Date Time 2017-08-02 11:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2017-45, ICD2017-33 
Volume (vol) vol.117 
Number (no) no.166(SDM), no.167(ICD) 
Page pp.109-114 
#Pages 6 
Date of Issue 2017-07-24 (SDM, ICD) 

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