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Paper Abstract and Keywords
Presentation 2017-10-26 10:50
Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.) SDM2017-57
Abstract (in Japanese) (See Japanese page) 
(in English) The effect of crystallized ZrO2 seed layers, which inserted between a TiN bottom electrode and a ferroelectric HfxZr1-xO2 (HZO) thin film, on the ferroelectricity of HZO films was investigated. The remanent polarization (2Pr = Pr+ − Pr−) of a TiN-electroded capacitor with a ZrO2-seed layer (ZrO2-seed) was approximately 1.4 times larger than that of capacitors without a seed layer. Furthermore, the maximum 2Pr was exhibited when the thickness of the ZrO2-seed layer was 2.0 nm. For the ZrO2-seed case, vertical grain growth of the HZO film was observed from the polycrystalline ZrO2 seed layer consisted mainly of orthorhombic and tetragonal phases after the ALD process. Moreover, large crystal grains were formed, in which the ZrO2 seed layer and HZO film were combined, which led to significantly improved ferroelectricity. In conclusion, this work suggests that the ZrO2 seed layer plays an important role as a nucleation layer of the HZO film.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric HfxZr1-xO2 thin film / ZrO2 seed layer / Atomic layer deposition (ALD) / MFM (Metal-Ferroelectric-Metal) capacitor / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 260, SDM2017-57, pp. 39-44, Oct. 2017.
Paper # SDM2017-57 
Date of Issue 2017-10-18 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee SDM  
Conference Date 2017-10-25 - 2017-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2017-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film 
Sub Title (in English)  
Keyword(1) Ferroelectric HfxZr1-xO2 thin film  
Keyword(2) ZrO2 seed layer  
Keyword(3) Atomic layer deposition (ALD)  
Keyword(4) MFM (Metal-Ferroelectric-Metal) capacitor  
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1st Author's Name Takashi Onaya  
1st Author's Affiliation Meiji University/National Institute for Materials Science (Meiji Univ./NIMS)
2nd Author's Name Toshihide Nabatame  
2nd Author's Affiliation National Institute for Materials Science/CREST, Japan Science and Technology Agency (NIMS/JST)
3rd Author's Name Naomi Sawamoto  
3rd Author's Affiliation Meiji University (Meiji Univ.)
4th Author's Name Akihiko Ohi  
4th Author's Affiliation National Institute for Materials Science (NIMS)
5th Author's Name Naoki Ikeda  
5th Author's Affiliation National Institute for Materials Science (NIMS)
6th Author's Name Toyohiro Chikyow  
6th Author's Affiliation National Institute for Materials Science (NIMS)
7th Author's Name Atsushi Ogura  
7th Author's Affiliation Meiji University (Meiji Univ.)
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Speaker Author-1 
Date Time 2017-10-26 10:50:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2017-57 
Volume (vol) vol.117 
Number (no) no.260 
Page pp.39-44 
#Pages 6 
Date of Issue 2017-10-18 (SDM) 

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