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Paper Abstract and Keywords
Presentation 2017-11-09 10:00
[Invited Talk] Multri-Physics Simulation of GaN MOVPE Growth
Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61
Abstract (in Japanese) (See Japanese page) 
(in English) In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia forming adducts. This adducts change into GaN units after complicated reaction in vapor phase and these GaN units adsorb onto substrate. However, our first principles and thermodynamic analysis shows that adduct formation is not main reaction. Moreover, we unify first principles calculations, thermodynamics analysis and fluid dynamic simulations.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MOVPE growth / First principles calculations / Thermodynamic analysis / Fluid dynamics / Multi-physics simulations / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 290, SDM2017-61, pp. 1-4, Nov. 2017.
Paper # SDM2017-61 
Date of Issue 2017-11-02 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2017-11-09 - 2017-11-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2017-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Multri-Physics Simulation of GaN MOVPE Growth 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MOVPE growth  
Keyword(3) First principles calculations  
Keyword(4) Thermodynamic analysis  
Keyword(5) Fluid dynamics  
Keyword(6) Multi-physics simulations  
Keyword(7)  
Keyword(8)  
1st Author's Name Kenji Shiraishi  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Kazuki Sekiguchi  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Kenta Chokawa  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Hiroki Shirakawa  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Kento Kawakami  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Yoshihiro Yamamoto  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
7th Author's Name Masaaki Araidai  
7th Author's Affiliation Nagoya University (Nagoya Univ.)
8th Author's Name Naoya Okamoto  
8th Author's Affiliation Nagoya University (Nagoya Univ.)
9th Author's Name Katsumori Yoshimatsu  
9th Author's Affiliation Nagoya University (Nagoya Univ.)
10th Author's Name Yoshihiro Kangawa  
10th Author's Affiliation Kyushu University (Kyushu Univ.)
11th Author's Name Koichi Kakimoto  
11th Author's Affiliation Kyushu University (Kyushu Univ.)
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Speaker Author-1 
Date Time 2017-11-09 10:00:00 
Presentation Time 60 minutes 
Registration for SDM 
Paper # SDM2017-61 
Volume (vol) vol.117 
Number (no) no.290 
Page pp.1-4 
#Pages 4 
Date of Issue 2017-11-02 (SDM) 

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