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Paper Abstract and Keywords
Presentation 2017-11-10 11:00
[Invited Talk] Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities -- Random Dopant Fluctuations and Self-Averaging --
Nobuyuki Sano (Univ. Tsukuba) SDM2017-68
Abstract (in Japanese) (See Japanese page) 
(in English) The classical and quantum effects associated with discrete impurities on transport characteristics and device modeling in nano-scale semiconductor devices are discussed. We stress the importance of the length-scale implicitly involved in device simulations, which becomes apparent when the continuous description of impurity is switched into the discrete. The physics behind the discrete impurity model employed for Drift-Diffusion simulations is fully explained. Also, the impurity-limited resistance due to localized multiple impurities in quasi-1D nanowires is analytically derived by employing the scattering theory. We then discuss the variability of the resistance and the physical origin of self-averaging which shows up as the channel length gets longer.
Keyword (in Japanese) (See Japanese page) 
(in English) random dopant fluctuations / device simulation / Coulomb potential / nanowire / impurity scattering / multiple-scattering / self-average /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 290, SDM2017-68, pp. 37-42, Nov. 2017.
Paper # SDM2017-68 
Date of Issue 2017-11-02 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-68

Conference Information
Committee SDM  
Conference Date 2017-11-09 - 2017-11-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2017-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities 
Sub Title (in English) Random Dopant Fluctuations and Self-Averaging 
Keyword(1) random dopant fluctuations  
Keyword(2) device simulation  
Keyword(3) Coulomb potential  
Keyword(4) nanowire  
Keyword(5) impurity scattering  
Keyword(6) multiple-scattering  
Keyword(7) self-average  
Keyword(8)  
1st Author's Name Nobuyuki Sano  
1st Author's Affiliation University of Tsukuba (Univ. Tsukuba)
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Speaker Author-1 
Date Time 2017-11-10 11:00:00 
Presentation Time 60 minutes 
Registration for SDM 
Paper # SDM2017-68 
Volume (vol) vol.117 
Number (no) no.290 
Page pp.37-42 
#Pages 6 
Date of Issue 2017-11-02 (SDM) 

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