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Paper Abstract and Keywords
Presentation 2017-11-17 13:00
[Invited Talk] Device characteristics of solution-processed top-gate organic transistors and development of nonvolatile organic memory devices
Takashi Nagase, Shoya Sanda, Fumiya Shiono, Takashi Kobayashi, Hiroyoshi Naito (Osaka Pref. Univ.) OME2017-27
Abstract (in Japanese) (See Japanese page) 
(in English) We report that the use of a top-gate/bottom-contact (TG/BC) configuration in solution-processed organic field-effect transistors (OFETs) allows extracting high field-effect mobilities and high operational stabilities irrespective of the surface energy of substrates. High average mobility over 8 cm2/Vs can be achieved in TG/BC OFETs based on soluble small-molecule semiconductors processed by spin coating. TG/BC OFETs are also useful for developing solution-processable organic nonvolatile memory devices. Good memory operations in solution-processed TG/BC OFET memory devices by utilizing the optical functions of organic semiconductors are also reported.
Keyword (in Japanese) (See Japanese page) 
(in English) Organic Transistors / Soluble Organic Semiconductors / Top-gate Configuration / Nonvolatile Organic Memory / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 313, OME2017-27, pp. 1-6, Nov. 2017.
Paper # OME2017-27 
Date of Issue 2017-11-10 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2017-27

Conference Information
Committee OME  
Conference Date 2017-11-17 - 2017-11-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka Univ. Nakanoshima Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic devices and sensors, etc. 
Paper Information
Registration To OME 
Conference Code 2017-11-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Device characteristics of solution-processed top-gate organic transistors and development of nonvolatile organic memory devices 
Sub Title (in English)  
Keyword(1) Organic Transistors  
Keyword(2) Soluble Organic Semiconductors  
Keyword(3) Top-gate Configuration  
Keyword(4) Nonvolatile Organic Memory  
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1st Author's Name Takashi Nagase  
1st Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
2nd Author's Name Shoya Sanda  
2nd Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
3rd Author's Name Fumiya Shiono  
3rd Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
4th Author's Name Takashi Kobayashi  
4th Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
5th Author's Name Hiroyoshi Naito  
5th Author's Affiliation Osaka Prefecture University (Osaka Pref. Univ.)
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Speaker Author-1 
Date Time 2017-11-17 13:00:00 
Presentation Time 45 minutes 
Registration for OME 
Paper # OME2017-27 
Volume (vol) vol.117 
Number (no) no.313 
Page pp.1-6 
#Pages 6 
Date of Issue 2017-11-10 (OME) 

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