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Paper Abstract and Keywords
Presentation 2017-12-01 10:20
Wettability improvement of thin gate dielectrics by mixture of self-assembled monolayers
Kazunori Kuribara, Toshiki Higashino, Taiki Nobeshima, Takehito Kozasa, Sei Uemura, Manabu Yoshida (AIST) OME2017-38
Abstract (in Japanese) (See Japanese page) 
(in English) We have improved wettability of thin gate dielectrics by mixing self-assembled monolayers (SAMs). Conventional SAMs shows low surface energy and don’t suit for solution process because of it alkyl chain terminal. Therefore, we mix lyophilic SAM with aromatic terminal into them to reduce contact angle by 30 degree. Optimizing ratio of molecular number of SAMs, we obtain high mobility and leakage current low enough.
Keyword (in Japanese) (See Japanese page) 
(in English) Self-assembled monolayer / Low-voltage operation / Wettability / Solution process / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 334, OME2017-38, pp. 15-18, Dec. 2017.
Paper # OME2017-38 
Date of Issue 2017-11-24 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OME2017-38

Conference Information
Committee OME  
Conference Date 2017-12-01 - 2017-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Sun Messe Tosu 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic molecular devices, biotechnology, thin film, novel material, evaluation method, etc 
Paper Information
Registration To OME 
Conference Code 2017-12-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Wettability improvement of thin gate dielectrics by mixture of self-assembled monolayers 
Sub Title (in English)  
Keyword(1) Self-assembled monolayer  
Keyword(2) Low-voltage operation  
Keyword(3) Wettability  
Keyword(4) Solution process  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kazunori Kuribara  
1st Author's Affiliation the National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Toshiki Higashino  
2nd Author's Affiliation the National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Taiki Nobeshima  
3rd Author's Affiliation the National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Takehito Kozasa  
4th Author's Affiliation the National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Sei Uemura  
5th Author's Affiliation the National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Manabu Yoshida  
6th Author's Affiliation the National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2017-12-01 10:20:00 
Presentation Time 20 minutes 
Registration for OME 
Paper # OME2017-38 
Volume (vol) vol.117 
Number (no) no.334 
Page pp.15-18 
#Pages 4 
Date of Issue 2017-11-24 (OME) 

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