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Paper Abstract and Keywords
Presentation 2017-12-01 09:40
A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition
Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-57 CPM2017-100 LQE2017-70
Abstract (in Japanese) (See Japanese page) 
(in English) Two kinds of substrates, sapphire and AlN/sapphire tem-plate (AlN template), were used for the growth of InGaN/GaN multi-quantum-well solar cell structures by metalorganic chemical vapor deposition, and their material and device properties were investigated. The results showed that the samples grown on AlN template had a better crystal quality with a larger in-plane compressive strain than the samples on sapphire, and solar cells fabricated on sapphire mostly exhibited better performance than those on AlN template. An analysis of the photoluminescence measurements indicated that a critical InGaN well thickness related to the generation of nonradiative recombination centers, which affects the internal and external quantum efficiencies, was thinner in samples grown on AlN template than in samples on sapphire. The critical thickness was speculated to be related to the large in-plane compressive strain in the samples on AlN template. In contrast, a sample on AlN template with a sufficiently thin InGaN well thickness of 1.0 nm exhibited better solar cell performance than one on sapphire. This implies that the improved crystal quality contributed to the improvement of internal quantum efficiency as long as the well layer was thinner than the critical thickness.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN/GaN MQW structure / Solar cells / MOCVD / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 333, LQE2017-70, pp. 39-44, Nov. 2017.
Paper # LQE2017-70 
Date of Issue 2017-11-23 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-57 CPM2017-100 LQE2017-70

Conference Information
Committee LQE CPM ED  
Conference Date 2017-11-30 - 2017-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Inst. tech. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2017-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition 
Sub Title (in English)  
Keyword(1) InGaN/GaN MQW structure  
Keyword(2) Solar cells  
Keyword(3) MOCVD  
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1st Author's Name Takuma Mori  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Miki Ohta  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Hiroki Harada  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
4th Author's Name Shinya Kato  
4th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
5th Author's Name Makoto Miyoshi  
5th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
6th Author's Name Takashi Egawa  
6th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker Author-1 
Date Time 2017-12-01 09:40:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2017-57, CPM2017-100, LQE2017-70 
Volume (vol) vol.117 
Number (no) no.331(ED), no.332(CPM), no.333(LQE) 
Page pp.39-44 
#Pages 6 
Date of Issue 2017-11-23 (ED, CPM, LQE) 

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