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Presentation 2017-12-14 15:10
A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting
Minori Yoshida, Kousuke Miyaji (Shinshu Univ.) CAS2017-91 ICD2017-79 CPSY2017-88 Link to ES Tech. Rep. Archives: ICD2017-79
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, energy harvesting power supply circuit using a cold-start function for IoT devices is required to restore power supply from low output energy harvesting sources even when a battery runs out of power. Although a boost-up charge pump circuit is normally used for the cold-start function, high channel resistance at power transistors in the charge pump limits the performance because of low gate-source-voltage. In this work, a start-up charge pump circuit for extremely low input voltage that can start-up from 190mV (VIN) is proposed and demonstrated. The proposed circuit uses inverter level shifter to generate 2VIN voltage swing for the gate of both main NMOS and PMOS power transistors to reduce the channel resistance. The proposed circuit is fully implemented in a standard 0.18um CMOS process and the measurement result shows that minimum input voltage of 190mV is achieved. Moreover, the proposed circuit achieves maximum efficiency of 59.2% when the input voltage is 390mV and the output current is 320nA. Compared with the conventional forward-body-bias circuit, output power increases by 181% at 300mV input voltage. The proposed circuit is suitable for a start-up circuit in ultralow power energy harvesting power management applications.
Keyword (in Japanese) (See Japanese page) 
(in English) Start-up charge pump / CMOS gate boosting / Energy harvesting / Voltage doubler / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 344, ICD2017-79, pp. 127-127, Dec. 2017.
Paper # ICD2017-79 
Date of Issue 2017-12-07 (CAS, ICD, CPSY) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF CAS2017-91 ICD2017-79 CPSY2017-88 Link to ES Tech. Rep. Archives: ICD2017-79

Conference Information
Committee ICD CPSY CAS  
Conference Date 2017-12-14 - 2017-12-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Art Hotel Ishigakijima 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2017-12-ICD-CPSY-CAS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting 
Sub Title (in English)  
Keyword(1) Start-up charge pump  
Keyword(2) CMOS gate boosting  
Keyword(3) Energy harvesting  
Keyword(4) Voltage doubler  
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1st Author's Name Minori Yoshida  
1st Author's Affiliation Shinshu University (Shinshu Univ.)
2nd Author's Name Kousuke Miyaji  
2nd Author's Affiliation Shinshu University (Shinshu Univ.)
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Date Time 2017-12-14 15:10:00 
Presentation Time 120 minutes 
Registration for ICD 
Paper # CAS2017-91, ICD2017-79, CPSY2017-88 
Volume (vol) vol.117 
Number (no) no.343(CAS), no.344(ICD), no.345(CPSY) 
Page p.127 
#Pages
Date of Issue 2017-12-07 (CAS, ICD, CPSY) 


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