Paper Abstract and Keywords |
Presentation |
2017-12-14 15:10
A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting Minori Yoshida, Kousuke Miyaji (Shinshu Univ.) CAS2017-91 ICD2017-79 CPSY2017-88 Link to ES Tech. Rep. Archives: ICD2017-79 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recently, energy harvesting power supply circuit using a cold-start function for IoT devices is required to restore power supply from low output energy harvesting sources even when a battery runs out of power. Although a boost-up charge pump circuit is normally used for the cold-start function, high channel resistance at power transistors in the charge pump limits the performance because of low gate-source-voltage. In this work, a start-up charge pump circuit for extremely low input voltage that can start-up from 190mV (VIN) is proposed and demonstrated. The proposed circuit uses inverter level shifter to generate 2VIN voltage swing for the gate of both main NMOS and PMOS power transistors to reduce the channel resistance. The proposed circuit is fully implemented in a standard 0.18um CMOS process and the measurement result shows that minimum input voltage of 190mV is achieved. Moreover, the proposed circuit achieves maximum efficiency of 59.2% when the input voltage is 390mV and the output current is 320nA. Compared with the conventional forward-body-bias circuit, output power increases by 181% at 300mV input voltage. The proposed circuit is suitable for a start-up circuit in ultralow power energy harvesting power management applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Start-up charge pump / CMOS gate boosting / Energy harvesting / Voltage doubler / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 344, ICD2017-79, pp. 127-127, Dec. 2017. |
Paper # |
ICD2017-79 |
Date of Issue |
2017-12-07 (CAS, ICD, CPSY) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
CAS2017-91 ICD2017-79 CPSY2017-88 Link to ES Tech. Rep. Archives: ICD2017-79 |
Conference Information |
Committee |
ICD CPSY CAS |
Conference Date |
2017-12-14 - 2017-12-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Art Hotel Ishigakijima |
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Paper Information |
Registration To |
ICD |
Conference Code |
2017-12-ICD-CPSY-CAS |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A 190mV Start-up Voltage Doubler Charge Pump with CMOS Gate Boosting Scheme using 0.18um Standard CMOS Process for Energy Harvesting |
Sub Title (in English) |
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Start-up charge pump |
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CMOS gate boosting |
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Energy harvesting |
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Voltage doubler |
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1st Author's Name |
Minori Yoshida |
1st Author's Affiliation |
Shinshu University (Shinshu Univ.) |
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Kousuke Miyaji |
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Shinshu University (Shinshu Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-12-14 15:10:00 |
Presentation Time |
120 minutes |
Registration for |
ICD |
Paper # |
CAS2017-91, ICD2017-79, CPSY2017-88 |
Volume (vol) |
vol.117 |
Number (no) |
no.343(CAS), no.344(ICD), no.345(CPSY) |
Page |
p.127 |
#Pages |
1 |
Date of Issue |
2017-12-07 (CAS, ICD, CPSY) |
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