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Paper Abstract and Keywords
Presentation 2017-12-22 15:30
Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate
Naoki Nishiguchi, Hiroki Utsumi, Akito Hara (Tohoku Gakuin Univ.) EID2017-24 SDM2017-85
Abstract (in Japanese) (See Japanese page) 
(in English) Germanium tin (GeSn) is known as a new semiconductor device material. We used metal induced crystallization (MIC) using copper (Cu) for crystallization of GeSn (Sn=7%) thin film. It was found that quality of Cu-MIC poly-GeSn (Sn=7%) is superior to those of solid-phase crystallization (SPC) poly-GeSn (Sn=7%) and pure poly-Ge thin film. We fabricated double-gate poly-GeSn (Sn=7%) thin-film transistors (TFTs) to reduce off-current and it was found to be mobility of 25 cm2/Vs and on/off ration of 4000.
Keyword (in Japanese) (See Japanese page) 
(in English) thin film transistor / GeSn / Ge / double gate / metal induced crystallization / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 373, SDM2017-85, pp. 67-70, Dec. 2017.
Paper # SDM2017-85 
Date of Issue 2017-12-15 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2017-24 SDM2017-85

Conference Information
Committee SDM EID  
Conference Date 2017-12-22 - 2017-12-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyoto University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Si, Si-related materials, device process, electron devices, and display technology 
Paper Information
Registration To SDM 
Conference Code 2017-12-SDM-EID 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Self-Aligned Double-Gate Cu-MIC Poly-GeSn TFT on a Glass Substrate 
Sub Title (in English)  
Keyword(1) thin film transistor  
Keyword(2) GeSn  
Keyword(3) Ge  
Keyword(4) double gate  
Keyword(5) metal induced crystallization  
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Keyword(7)  
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1st Author's Name Naoki Nishiguchi  
1st Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
2nd Author's Name Hiroki Utsumi  
2nd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
3rd Author's Name Akito Hara  
3rd Author's Affiliation Tohoku Gakuin University (Tohoku Gakuin Univ.)
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Speaker Author-1 
Date Time 2017-12-22 15:30:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2017-24, SDM2017-85 
Volume (vol) vol.117 
Number (no) no.372(EID), no.373(SDM) 
Page pp.67-70 
#Pages 4 
Date of Issue 2017-12-15 (EID, SDM) 

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