Paper Abstract and Keywords |
Presentation |
2017-12-22 13:30
Seebeck effect measurement of rare metal free oxide semiconductor Ryuki Nomura, Tatsuya Aramaki, Tokiyoshi Matsuda (Ryukoku Univ.), Kenta Umeda, Mutsunori Uenuma (NAIST), Mutsumi Kimura (Ryukoku Univ.) EID2017-17 SDM2017-78 Link to ES Tech. Rep. Archives: EID2017-17 SDM2017-78 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
It is thought that if we convert thermal energy to electric energy efficiently, we can reduce the amount of oil used. However, rare metals are often used for oxide semiconductors which are expected as thermoelectric conversion elements. Therefore, we are researching thermoelectric conversion elements using GTO thin film which is a rare metal free oxide semiconductor. In this study, the dependence on the annealing, oxygen flow rate ratio and film forming pressure of the GTO thermoelectric conversion element was evaluated. When the oxygen flow rate ratio Ar / O2 = 20/4 sccm, the Seebeck coefficient was -284 μV / K, the conductivity was 3.9 S / cm, and the PF was 0.031 mW / m K2. We believe that performance will be improved by optimizing the film forming conditions in the future. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Thermoelectric effect / Seebeck effect / Oxide semiconductor / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 373, SDM2017-78, pp. 29-34, Dec. 2017. |
Paper # |
SDM2017-78 |
Date of Issue |
2017-12-15 (EID, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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EID2017-17 SDM2017-78 Link to ES Tech. Rep. Archives: EID2017-17 SDM2017-78 |
Conference Information |
Committee |
SDM EID |
Conference Date |
2017-12-22 - 2017-12-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Si, Si-related materials, device process, electron devices, and display technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2017-12-SDM-EID |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Seebeck effect measurement of rare metal free oxide semiconductor |
Sub Title (in English) |
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Keyword(1) |
Thermoelectric effect |
Keyword(2) |
Seebeck effect |
Keyword(3) |
Oxide semiconductor |
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1st Author's Name |
Ryuki Nomura |
1st Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
2nd Author's Name |
Tatsuya Aramaki |
2nd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
3rd Author's Name |
Tokiyoshi Matsuda |
3rd Author's Affiliation |
Ryukoku University (Ryukoku Univ.) |
4th Author's Name |
Kenta Umeda |
4th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
5th Author's Name |
Mutsunori Uenuma |
5th Author's Affiliation |
Nara Institute of Science and Technology (NAIST) |
6th Author's Name |
Mutsumi Kimura |
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Ryukoku University (Ryukoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-12-22 13:30:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
EID2017-17, SDM2017-78 |
Volume (vol) |
vol.117 |
Number (no) |
no.372(EID), no.373(SDM) |
Page |
pp.29-34 |
#Pages |
6 |
Date of Issue |
2017-12-15 (EID, SDM) |
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