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Paper Abstract and Keywords
Presentation 2018-01-25 13:40
Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor
Yuichiro Masuda, Tsuyoshi Nagase, Wataru Kunieda, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2017-31
Abstract (in Japanese) (See Japanese page) 
(in English) We have grown gallium nitride (GaN) thin films on c-plane sapphire substrate by chemical vapor deposition (CVD) using Ga vapor and NH3. It was found that the improvement of crystalline and luminescence characteristics of the GaN films can be achieved for the CVD of this study by depositing a low temperature buffer layer at 600 ℃ before the growth of GaN at high temperature (1100 ℃). It was also suggested that the heat treatment in Ga vapor prior to high temperature growth enhances the lateral growth of GaN films without depositing a low temperature buffer layer, which resulted in the improvement of luminescence property.
Keyword (in Japanese) (See Japanese page) 
(in English) gallium nitride / photoluminescence / chemical vapor deposition / thin films growth / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 411, EID2017-31, pp. 5-8, Jan. 2018.
Paper # EID2017-31 
Date of Issue 2018-01-18 (EID) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2017-31

Conference Information
Committee EID ITE-IDY IEIJ-SSL SID-JC IEE-EDD  
Conference Date 2018-01-25 - 2018-01-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ., Hamamatsu 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EID 
Conference Code 2018-01-EID-IDY-SSL-JC-EDD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor 
Sub Title (in English)  
Keyword(1) gallium nitride  
Keyword(2) photoluminescence  
Keyword(3) chemical vapor deposition  
Keyword(4) thin films growth  
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1st Author's Name Yuichiro Masuda  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Tsuyoshi Nagase  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Wataru Kunieda  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Tetsuya Kouno  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Hiroko Kominami  
5th Author's Affiliation Shizuoka University (Shizuoka Univ.)
6th Author's Name Kazuhiko Hara  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2018-01-25 13:40:00 
Presentation Time 10 minutes 
Registration for EID 
Paper # EID2017-31 
Volume (vol) vol.117 
Number (no) no.411 
Page pp.5-8 
#Pages 4 
Date of Issue 2018-01-18 (EID) 

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