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Paper Abstract and Keywords
Presentation 2018-01-30 13:30
[Invited Talk] Lateral Charge Migration Suppression Technique of 3D-NAND Flash by Vth Nearing
Kyoji Mizoguchi, Shohei Kotaki, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.) SDM2017-93
Abstract (in Japanese) (See Japanese page) 
(in English) In the near data computing, a SSD controller embeds more processing units and RAMs to execute a part of application which requires high-speed processing. This paper proposes a reliability enhancement technique for 3D NAND flash, which makes full use of the advanced processing performance obtained by the near data computing. The reliability of 3D charge-trap NAND flash is degraded during the data-retention by the vertical charge de-trap from the tunnel oxide and the lateral charge migration in the charge trap layer. Vth Nearing is proposed to suppress the lateral charge migration of 3D NAND flash by modulating data so that threshold voltage (Vth) of adjacent cells become close. As a result, the data-retention errors decrease by 40%, the data-retention time increases by 2.8-times.
Keyword (in Japanese) (See Japanese page) 
(in English) NAND flash memory / SSD / reliability / charge migration / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 427, SDM2017-93, pp. 9-12, Jan. 2018.
Paper # SDM2017-93 
Date of Issue 2018-01-23 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2018-01-30 - 2018-01-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2018-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Lateral Charge Migration Suppression Technique of 3D-NAND Flash by Vth Nearing 
Sub Title (in English)  
Keyword(1) NAND flash memory  
Keyword(2) SSD  
Keyword(3) reliability  
Keyword(4) charge migration  
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1st Author's Name Kyoji Mizoguchi  
1st Author's Affiliation Chuo University (Chuo Univ.)
2nd Author's Name Shohei Kotaki  
2nd Author's Affiliation Chuo University (Chuo Univ.)
3rd Author's Name Yoshiaki Deguchi  
3rd Author's Affiliation Chuo University (Chuo Univ.)
4th Author's Name Ken Takeuchi  
4th Author's Affiliation Chuo University (Chuo Univ.)
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Speaker Author-1 
Date Time 2018-01-30 13:30:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2017-93 
Volume (vol) vol.117 
Number (no) no.427 
Page pp.9-12 
#Pages 4 
Date of Issue 2018-01-23 (SDM) 

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