| 講演抄録/キーワード |
| 講演名 |
2018-01-30 15:30
[招待講演]Sub-nm EOT Ferroelectric HfO2 on p+Ge with Highly Reliable Field Cycling Properties ○Xuan Tian・Lun Xu・Shigehisa Shibayama・Tomonori Nishimura・Takeaki Yajima(Univ. of Tokyo)・Shinji Migita(AIST)・Akira Toriumi(Univ. of Tokyo) SDM2017-96 |
| 抄録 |
(和) |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indicates that stable ferroelectric characteristics are maintained down to 5-nm-thick by taking care of doping and capping effects. Furthermore, the cycling performance shows no wake-up behavior, no obvious degradation after 10^8 cycles. |
| (英) |
5-nm-thick ferroelectric Y-doped HfO2 was intensively studied. The thickness dependence of ferroelectric properties indicates that stable ferroelectric characteristics are maintained down to 5-nm-thick by taking care of doping and capping effects. Furthermore, the cycling performance shows no wake-up behavior, no obvious degradation after 10^8 cycles. |
| キーワード |
(和) |
Ferroelectric HfO2 / thickness dependence / field cycling reliability / / / / / |
| (英) |
Ferroelectric HfO2 / thickness dependence / field cycling reliability / / / / / |
| 文献情報 |
信学技報, vol. 117, no. 427, SDM2017-96, pp. 21-24, 2018年1月. |
| 資料番号 |
SDM2017-96 |
| 発行日 |
2018-01-23 (SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| PDFダウンロード |
SDM2017-96 |