Paper Abstract and Keywords |
Presentation |
2018-02-28 17:05
Low-temperature charge pumping on silicon-on-insulator devices Tokinobu Watanabe (Univ. Toyama), Masahiro Hori, Yukinori Ono (Shizuoka Univ.) ED2017-115 SDM2017-115 Link to ES Tech. Rep. Archives: ED2017-115 SDM2017-115 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The charge pumping (CP) was applied to a SOI p-i-n diode at 0.3 – 300 K . We found that The CP current measured below 100 K is strongly dependent on the polarity of the backgate bias. The dependence of the CP current on the rising/falling time is found to differ depending on the polarity of the backgate bias. These results suggest that density of state profile near the conduction and valence-band edges in the SOI devices can be measured separately with the low temperature CP. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
charge pumping / interface defects / SOI / low-temperature / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 454, SDM2017-115, pp. 51-56, Feb. 2018. |
Paper # |
SDM2017-115 |
Date of Issue |
2018-02-21 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2017-115 SDM2017-115 Link to ES Tech. Rep. Archives: ED2017-115 SDM2017-115 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2018-02-28 - 2018-02-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Centennial Hall, Hokkaido Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Functional nanodevices and related technologies |
Paper Information |
Registration To |
SDM |
Conference Code |
2018-02-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low-temperature charge pumping on silicon-on-insulator devices |
Sub Title (in English) |
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Keyword(1) |
charge pumping |
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interface defects |
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SOI |
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low-temperature |
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1st Author's Name |
Tokinobu Watanabe |
1st Author's Affiliation |
University of Toyama (Univ. Toyama) |
2nd Author's Name |
Masahiro Hori |
2nd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
3rd Author's Name |
Yukinori Ono |
3rd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
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Speaker |
Author-1 |
Date Time |
2018-02-28 17:05:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2017-115, SDM2017-115 |
Volume (vol) |
vol.117 |
Number (no) |
no.453(ED), no.454(SDM) |
Page |
pp.51-56 |
#Pages |
6 |
Date of Issue |
2018-02-21 (ED, SDM) |
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