Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2018-02-28 13:50
[Invited Talk] Thermoelectric Properties of Semiconductor Thin Films
Hiromichi Ohta (Hokkaido Univ.) ED2017-109 SDM2017-109
Abstract (in Japanese) (See Japanese page) 
(in English) Themopower (≡Seebeck coefficient, S), which is a physical phenomenon that thermo-electromotive force is
generated between two ends of a metal or semiconductor by introducing a temperature difference in the material, is known as not only an important physical property for thermoelectric energy conversion but also a useful to understand electronic structures of materials since |S| strongly depends on the energy derivative of the electronic density of states at around the Fermi energy. In case of bulk system, the slope of log n vs. S relation should be –ln 10∙kB∙e−1 (≡ −198 μV K−1) since parabolic shaped E−k relation at around the conduction band minimum is generally observed. Further, an enhanced S can be observed by modifying the DOS in low-dimensional structures such as 2D quantum-wells and 1D nanowires. Here I review electric field modulated thermopower of several oxide-based transistors.
Keyword (in Japanese) (See Japanese page) 
(in English) Thermoelectric properties / Seebeck effect / 2D electron system / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 453, ED2017-109, pp. 23-26, Feb. 2018.
Paper # ED2017-109 
Date of Issue 2018-02-21 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-109 SDM2017-109

Conference Information
Committee ED SDM  
Conference Date 2018-02-28 - 2018-02-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Centennial Hall, Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2018-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Thermoelectric Properties of Semiconductor Thin Films 
Sub Title (in English)  
Keyword(1) Thermoelectric properties  
Keyword(2) Seebeck effect  
Keyword(3) 2D electron system  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiromichi Ohta  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name  
2nd Author's Affiliation ()
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2018-02-28 13:50:00 
Presentation Time 50 minutes 
Registration for ED 
Paper # ED2017-109, SDM2017-109 
Volume (vol) vol.117 
Number (no) no.453(ED), no.454(SDM) 
Page pp.23-26 
#Pages
Date of Issue 2018-02-21 (ED, SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan