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| Presentation | 2018-02-28 10:00 Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)  ED2017-104 SDM2017-104 Link to ES Tech. Rep. Archives: ED2017-104 SDM2017-104 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation and high functionality. For realistic device application, with a view to the room-temperature operation it is important to achieve nanodots less than 10 nm in size and stable characteristics. Here we used single-layer granular thin films in which Fe-nanodot arrays are dispersed in a MgF2 insulating matrix as a candidate structure for small-size metal nanodots. The SETs were fabricated by depositing the granular thin film between nano-gap electrodes and their electrical characteristics were investigated between 7 K and 300 K. We observed Coulomb oscillations even at 210 K. Furthermore, the offset charge drift, which is the time-dependent phase shift of Coulomb oscillations of the SET, was much smaller than that of a metal-based SET with an Al single-electron island and Al2O3 tunnel junctions. The results clearly indicate a high time stability of the Coulomb oscillations. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Single-electron transistor / Granular thin film / Coulomb oscillation / Charge offset drift / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 453, ED2017-104, pp. 1-6, Feb. 2018. | |
| Paper # | ED2017-104 | |
| Date of Issue | 2018-02-21 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2017-104 SDM2017-104 Link to ES Tech. Rep. Archives: ED2017-104 SDM2017-104 |
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| Conference Information | |
| Committee | ED SDM |
| Conference Date | 2018-02-28 - 2018-02-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Centennial Hall, Hokkaido Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Functional nanodevices and related technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2018-02-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films |
| Sub Title (in English) | |
| Keyword(1) | Single-electron transistor |
| Keyword(2) | Granular thin film |
| Keyword(3) | Coulomb oscillation |
| Keyword(4) | Charge offset drift |
| Keyword(5) | |
| Keyword(6) | |
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| 1st Author's Name | Yuki Asai |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Shusaku Honjo |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Takayuki Gyakushi |
| 3rd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 4th Author's Name | Atsushi Tsurumaki-Fukuchi |
| 4th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 5th Author's Name | Masashi Arita |
| 5th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 6th Author's Name | Yasuo Takahashi |
| 6th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2018-02-28 10:00:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2017-104, SDM2017-104 |
| Volume (vol) | vol.117 |
| Number (no) | no.453(ED), no.454(SDM) |
| Page | pp.1-6 |
| #Pages | 6 |
| Date of Issue | 2018-02-21 (ED, SDM) |
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