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Paper Abstract and Keywords
Presentation 2018-04-07 14:15
Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device.
Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.) SDM2018-8 OME2018-8
Abstract (in Japanese) (See Japanese page) 
(in English) Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky characteristics than conventional metal–amorphous oxide semiconductor junctions. To the vest of our knowledge, the origin of Schottky properties of InGaZnO/AgOX hetero-interface has not been reported in detail. In this study, we investigated the physical properties of AgOX and the electronic states at IGZO/AgOX interface by the hard X-ray photoelectron spectroscopy with a CrKα (5415 eV) X-ray source.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaZnOx(IGZO) / Silver-oxide / Schottky diode / IGZO/AfOX interface / MES-FET / Flexible device / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 1, SDM2018-8, pp. 33-36, April 2018.
Paper # SDM2018-8 
Date of Issue 2018-03-30 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-8 OME2018-8

Conference Information
Committee SDM OME  
Conference Date 2018-04-06 - 2018-04-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawaken Seinen Kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. 
Paper Information
Registration To SDM 
Conference Code 2018-04-SDM-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. 
Sub Title (in English)  
Keyword(1) InGaZnOx(IGZO)  
Keyword(2) Silver-oxide  
Keyword(3) Schottky diode  
Keyword(4) IGZO/AfOX interface  
Keyword(5) MES-FET  
Keyword(6) Flexible device  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusaku Magari  
1st Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
2nd Author's Name Hisao Makino  
2nd Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
3rd Author's Name Shinsuke Hashimoto  
3rd Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
4th Author's Name Kenichiro Hamada  
4th Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
5th Author's Name Kentaro Masuda  
5th Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
6th Author's Name Mamoru Furuta  
6th Author's Affiliation Kochi University of Technology (Kochi Univ. of Tech.)
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Speaker Author-1 
Date Time 2018-04-07 14:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2018-8, OME2018-8 
Volume (vol) vol.118 
Number (no) no.1(SDM), no.2(OME) 
Page pp.33-36 
#Pages 4 
Date of Issue 2018-03-30 (SDM, OME) 

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