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| Presentation | 2018-04-07 14:15 Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.)  SDM2018-8 OME2018-8 Link to ES Tech. Rep. Archives: SDM2018-8 OME2018-8 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Oxide heterojunction of the In–Ga–Zn–O (IGZO) and the silver oxide (AgOX) has been reported to exhibit better Schottky characteristics than conventional metal–amorphous oxide semiconductor junctions. To the vest of our knowledge, the origin of Schottky properties of InGaZnO/AgOX hetero-interface has not been reported in detail. In this study, we investigated the physical properties of AgOX and the electronic states at IGZO/AgOX interface by the hard X-ray photoelectron spectroscopy with a CrKα (5415 eV) X-ray source. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaZnOx(IGZO) / Silver-oxide / Schottky diode / IGZO/AfOX interface / MES-FET / Flexible device / / | |
| Reference Info. | IEICE Tech. Rep., vol. 118, no. 1, SDM2018-8, pp. 33-36, April 2018. | |
| Paper # | SDM2018-8 | |
| Date of Issue | 2018-03-30 (SDM, OME) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2018-8 OME2018-8 Link to ES Tech. Rep. Archives: SDM2018-8 OME2018-8 |
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| Conference Information | |
| Committee | SDM OME |
| Conference Date | 2018-04-06 - 2018-04-07 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Okinawaken Seinen Kaikan |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Thin film devices (Si, compound, organic, flexible), Biotechnology, Materials, Characterization, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2018-04-SDM-OME |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device. |
| Sub Title (in English) | |
| Keyword(1) | InGaZnOx(IGZO) |
| Keyword(2) | Silver-oxide |
| Keyword(3) | Schottky diode |
| Keyword(4) | IGZO/AfOX interface |
| Keyword(5) | MES-FET |
| Keyword(6) | Flexible device |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yusaku Magari |
| 1st Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 2nd Author's Name | Hisao Makino |
| 2nd Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 3rd Author's Name | Shinsuke Hashimoto |
| 3rd Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 4th Author's Name | Kenichiro Hamada |
| 4th Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 5th Author's Name | Kentaro Masuda |
| 5th Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
| 6th Author's Name | Mamoru Furuta |
| 6th Author's Affiliation | Kochi University of Technology (Kochi Univ. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2018-04-07 14:15:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2018-8, OME2018-8 |
| Volume (vol) | vol.118 |
| Number (no) | no.1(SDM), no.2(OME) |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2018-03-30 (SDM, OME) |
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