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Paper Abstract and Keywords
Presentation 2018-08-07 14:25
Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET"
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK) SDM2018-31 ICD2018-18
Abstract (in Japanese) (See Japanese page) 
(in English) In order to construct a rectifier that function with µW power, it is necessary to develop a new diode technology. The conventional p-n junction diodes and Schottky barrier diodes are dominated by the qV/kBT conduction mechanism the current-voltage characteristics rise exponentially. It is impossible to rectify the AC input with ultralow voltage amplitude. In this study, we focused on “PN-Body Tied SOI-FET” (PNBT) with steep SS proposed in our laboratory and conducted a rectification experiment by setting the input amplitude of the sinewave to 10mV. In the diode by PNBT, perfect half-wave rectification was confirmed even when the input amplitude was 10mV. It is promising for small voltage rectification on RF energy harvesting and sensing.
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Reference Info. IEICE Tech. Rep., vol. 118, no. 172, SDM2018-31, pp. 31-34, Aug. 2018.
Paper # SDM2018-31 
Date of Issue 2018-07-31 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2018-31 ICD2018-18

Conference Information
Committee SDM ICD ITE-IST  
Conference Date 2018-08-07 - 2018-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English) Hokkaido Univ., Graduate School of IST M Bldg., M151 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications 
Paper Information
Registration To SDM 
Conference Code 2018-08-SDM-ICD-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Experiment of Ultralow Voltage Rectification by Super Steep SS "PN-Body Tied SOI-FET" 
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1st Author's Name Shun Momose  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Jiro Ida  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Takuya Yamada  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
4th Author's Name Takayuki Mori  
4th Author's Affiliation Kanazawa Institute of Technology (KIT)
5th Author's Name Kenji Itoh  
5th Author's Affiliation Kanazawa Institute of Technology (KIT)
6th Author's Name Koichiro Ishibashi  
6th Author's Affiliation The University of Electro-Communications (UEC)
7th Author's Name Yasuo Arai  
7th Author's Affiliation High Energy Accelerator Research Organization (KEK)
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Speaker Author-1 
Date Time 2018-08-07 14:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2018-31, ICD2018-18 
Volume (vol) vol.118 
Number (no) no.172(SDM), no.173(ICD) 
Page pp.31-34 
#Pages 4 
Date of Issue 2018-07-31 (SDM, ICD) 

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