講演抄録/キーワード |
講演名 |
2018-10-18 10:50
Schottky barrier height reduction of Pd2Si/Si(100) diodes by dopant segregation process ○Rengie Mark D. Mailig・Min Gee Kim・Shun-ichiro Ohmi(Tokyo Tech.) SDM2018-59 エレソ技報アーカイブへのリンク:SDM2018-59 |
抄録 |
(和) |
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS) process was investigated. Furthermore, the effects of the TiN encapsulating layer on the electrical and the physical properties Pd2Si/Si(100) SB diodes were examined. Smooth surface morphology and line edges were obtained for Pd2Si formed with TiN encapsulating layer. Results show that the low SBH to hole (qϕ_Bp) of the Pd2Si/n-Si(100) diodes with DS process was realized at 0.20 eV with ideality factor (n) of 1.11. |
(英) |
In this paper, the reduction of the Schottky barrier height (SBH) of Pd2Si/Si(100) diodes by the dopant segregation (DS) process was investigated. Furthermore, the effects of the TiN encapsulating layer on the electrical and the physical properties Pd2Si/Si(100) SB diodes were examined. Smooth surface morphology and line edges were obtained for Pd2Si formed with TiN encapsulating layer. Results show that the low SBH to hole (qϕ_Bp) of the Pd2Si/n-Si(100) diodes with DS process was realized at 0.20 eV with ideality factor (n) of 1.11. |
キーワード |
(和) |
Palladium Silicide / Dopant Segregation Process / Schottky Barrier Height / TiN Encapsulating Layer / / / / |
(英) |
Palladium Silicide / Dopant Segregation Process / Schottky Barrier Height / TiN Encapsulating Layer / / / / |
文献情報 |
信学技報, vol. 118, no. 241, SDM2018-59, pp. 35-40, 2018年10月. |
資料番号 |
SDM2018-59 |
発行日 |
2018-10-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
SDM2018-59 エレソ技報アーカイブへのリンク:SDM2018-59 |