講演抄録/キーワード |
講演名 |
2018-11-22 13:40
Power Distribution Network (PDN) Modeling of the Perforated Planes in A Silicon Interposer for High Bandwidth Memory (HBM) ○Kyungjun Cho・Youngwoo Kim・Subin Kim・Hyunwook Park・Junyong Park・Seongsoo Lee・Joungho Kim(KAIST) EMCJ2018-62 |
抄録 |
(和) |
In this paper, we first propose models of the power distribution network (PDN) of perforated power and ground (P/G) planes including substrate effects for a silicon interposer. Since it is almost impossible to simulate high-density perforated PDN structure, we suggest modeling methodology for perforated planes to reduce simulation time significantly with high accuracy.
To obtain PDN impedance of silicon interposer faster, we convert the perforated planes to solid planes with a dielectric mixture. Previously, the basic air-filled structure of equivalent solid planes is designed from the EM simulation. The resistance (R) and inductance (L) of solid planes are similarly obtained by comparing those of perforated planes. Then, the capacitance (C) and conductance (G) of perforated planes are precisely calcaled based on the conformal mapping method. From the calculated C and G, the physical dimension and material properties of the dielectric mixture of solid planes are determined respectively.
Because the PDN of a silicon interposer consists of a periodic structure, we design and analyze unit cell of PDN thoroughly. From the unit cell analysis, the electrical characteristic of an entire PDN can be successfully estimated. The PDN impedance of proposed solid and perforated planes and the simulation time to obtain each PDN impedance are compared evaluated respectively. The proposed methodology is validated by full 3-D electromagnetic (EM) simulation in the frequency range from 0.01 to 20 GHz. |
(英) |
In this paper, we first propose models of the power distribution network (PDN) of perforated power and ground (P/G) planes including substrate effects for a silicon interposer. Since it is almost impossible to simulate high-density perforated PDN structure, we suggest modeling methodology for perforated planes to reduce simulation time significantly with high accuracy.
To obtain PDN impedance of silicon interposer faster, we convert the perforated planes to solid planes with a dielectric mixture. Previously, the basic air-filled structure of equivalent solid planes is designed from the EM simulation. The resistance (R) and inductance (L) of solid planes are similarly obtained by comparing those of perforated planes. Then, the capacitance (C) and conductance (G) of perforated planes are precisely calcaled based on the conformal mapping method. From the calculated C and G, the physical dimension and material properties of the dielectric mixture of solid planes are determined respectively.
Because the PDN of a silicon interposer consists of a periodic structure, we design and analyze unit cell of PDN thoroughly. From the unit cell analysis, the electrical characteristic of an entire PDN can be successfully estimated. The PDN impedance of proposed solid and perforated planes and the simulation time to obtain each PDN impedance are compared evaluated respectively. The proposed methodology is validated by full 3-D electromagnetic (EM) simulation in the frequency range from 0.01 to 20 GHz. |
キーワード |
(和) |
Conformal mapping / High bandwidth memory / Power distribution network / Silicon interposer / / / / |
(英) |
Conformal mapping / High bandwidth memory / Power distribution network / Silicon interposer / / / / |
文献情報 |
信学技報, vol. 118, no. 317, EMCJ2018-62, pp. 21-21, 2018年11月. |
資料番号 |
EMCJ2018-62 |
発行日 |
2018-11-15 (EMCJ) |
ISSN |
Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
EMCJ2018-62 |