Paper Abstract and Keywords |
Presentation |
2018-12-06 15:30
Simulation analysis of the write error rate of voltage-torque MRAM Hiroshi Imamura (AIST) MRIS2018-23 Link to ES Tech. Rep. Archives: MRIS2018-23 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Voltage torque MRAM, where the information is written by using the voltage control of the magntic anisotropy, has attracted much attention as a fast and ultra-low-power non-volatile memory. We introduce the operation principles of the voltage-torque MRAM and report the results of our simulation analysis of the write error rate which is one of the key properties for practical applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
non-volatile memory / MRAM / voltage-torque / magnetic anisotropy / write error rate / / / |
Reference Info. |
IEICE Tech. Rep., vol. 118, no. 347, MRIS2018-23, pp. 19-23, Dec. 2018. |
Paper # |
MRIS2018-23 |
Date of Issue |
2018-11-29 (MRIS) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
MRIS2018-23 Link to ES Tech. Rep. Archives: MRIS2018-23 |
Conference Information |
Committee |
MRIS ITE-MMS |
Conference Date |
2018-12-06 - 2018-12-07 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Ehime University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Signal Processing and Others |
Paper Information |
Registration To |
MRIS |
Conference Code |
2018-12-MRIS-MMS |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Simulation analysis of the write error rate of voltage-torque MRAM |
Sub Title (in English) |
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Keyword(1) |
non-volatile memory |
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MRAM |
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voltage-torque |
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magnetic anisotropy |
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write error rate |
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1st Author's Name |
Hiroshi Imamura |
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National Institute of Advanced Industrial Science and Technology (AIST) (AIST) |
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Speaker |
Author-1 |
Date Time |
2018-12-06 15:30:00 |
Presentation Time |
30 minutes |
Registration for |
MRIS |
Paper # |
MRIS2018-23 |
Volume (vol) |
vol.118 |
Number (no) |
no.347 |
Page |
pp.19-23 |
#Pages |
5 |
Date of Issue |
2018-11-29 (MRIS) |