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Paper Abstract and Keywords
Presentation 2018-12-06 15:30
Simulation analysis of the write error rate of voltage-torque MRAM
Hiroshi Imamura (AIST) MRIS2018-23
Abstract (in Japanese) (See Japanese page) 
(in English) Voltage torque MRAM, where the information is written by using the voltage control of the magntic anisotropy, has attracted much attention as a fast and ultra-low-power non-volatile memory. We introduce the operation principles of the voltage-torque MRAM and report the results of our simulation analysis of the write error rate which is one of the key properties for practical applications.
Keyword (in Japanese) (See Japanese page) 
(in English) non-volatile memory / MRAM / voltage-torque / magnetic anisotropy / write error rate / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 347, MRIS2018-23, pp. 19-23, Dec. 2018.
Paper # MRIS2018-23 
Date of Issue 2018-11-29 (MRIS) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF MRIS2018-23

Conference Information
Committee MRIS ITE-MMS  
Conference Date 2018-12-06 - 2018-12-07 
Place (in Japanese) (See Japanese page) 
Place (in English) Ehime University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Signal Processing and Others 
Paper Information
Registration To MRIS 
Conference Code 2018-12-MRIS-MMS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Simulation analysis of the write error rate of voltage-torque MRAM 
Sub Title (in English)  
Keyword(1) non-volatile memory  
Keyword(2) MRAM  
Keyword(3) voltage-torque  
Keyword(4) magnetic anisotropy  
Keyword(5) write error rate  
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1st Author's Name Hiroshi Imamura  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST) (AIST)
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Speaker Author-1 
Date Time 2018-12-06 15:30:00 
Presentation Time 30 minutes 
Registration for MRIS 
Paper # MRIS2018-23 
Volume (vol) vol.118 
Number (no) no.347 
Page pp.19-23 
#Pages 5 
Date of Issue 2018-11-29 (MRIS) 

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