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Paper Abstract and Keywords
Presentation 2018-12-25 13:15
Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ)
Yoshiki akita, Naoto Matsuo (Univ. of Hyogo), Kazuyuki Kohama, Kazuhiro Ito (Osaka Univ.) EID2018-5 SDM2018-78
Abstract (in Japanese) (See Japanese page) 
(in English) We examined the effect of SiOx capping film on Ge films in FLA. The crystallinity was different between SPC and LPC. At SPC, the crystalline fraction was increased by the capping film for 60 nm-thick Ge film, although it decreased with the capping film for 15 - 60 nm at LPC. Many small grains with a diameter of approximately 10 nm was observed in SEM image. In addition, it was found by Raman spectral that the µc-Ge decreased as the film thickness increased for the LPC. The XRD results showed that the grain growth with (111), (220) and (311) planes becomes remarkable as the film thickness increased. It is considered that the µc-Ge serves as a nucleus for Ge crystallization by LPC.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge / crystallization / Flash lamp annealing / SiOx capping film / / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 380, SDM2018-78, pp. 17-20, Dec. 2018.
Paper # SDM2018-78 
Date of Issue 2018-12-18 (EID, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2018-5 SDM2018-78

Conference Information
Committee EID SDM ITE-IDY  
Conference Date 2018-12-25 - 2018-12-25 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2018-12-EID-SDM-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of SiOx Capping Film on Crystallization of Ge Film for Flash Lamp Annealing (Ⅱ) 
Sub Title (in English)  
Keyword(1) Ge  
Keyword(2) crystallization  
Keyword(3) Flash lamp annealing  
Keyword(4) SiOx capping film  
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1st Author's Name Yoshiki akita  
1st Author's Affiliation University of Hyogo (Univ. of Hyogo)
2nd Author's Name Naoto Matsuo  
2nd Author's Affiliation University of Hyogo (Univ. of Hyogo)
3rd Author's Name Kazuyuki Kohama  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Kazuhiro Ito  
4th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2018-12-25 13:15:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # EID2018-5, SDM2018-78 
Volume (vol) vol.118 
Number (no) no.379(EID), no.380(SDM) 
Page pp.17-20 
#Pages 4 
Date of Issue 2018-12-18 (EID, SDM) 

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