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Paper Abstract and Keywords
Presentation 2019-01-29 13:20
[Invited Talk] Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique
Tadashi Yamaguchi, Tiantian Zhang, Kazuyuki Omori, Yasuhiro Shimada, Yorinobu Kunimune, Takashi Ide, Masao Inoue, Masazumi Matsuura (Renesas) SDM2018-86
Abstract (in Japanese) (See Japanese page) 
(in English) Highly reliable ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) film with Al nanoclusters embedded by sub-monolayer doping technique is demonstrated for the first time. Al nanoclusters increase the remnant polarization (Pr) and reduce the voltage necessary for polarization switching. Furthermore, the program and erase endurance at the cycle of more than 250k and the Pr retention at 85ºC for 10 years are achieved. Al nanoclusters are formed by the partial oxidation of sub-monolayer metallic Al embedded in HZO films. Al nanoclusters enhance the large grain growth of orthorhombic-phase HZO during FE-HZO crystallization annealing. The reduction of grain boundaries caused by the large grain growth with Al nanoclusters effectively reduces the leakage current in the HZO film. As a result, reliability of the FE HZO film is significantly improved.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric / Hf0.5Zr0.5O2 / Al nanocluster / Al doping / FeFET memory / / /  
Reference Info. IEICE Tech. Rep., vol. 118, no. 429, SDM2018-86, pp. 21-26, Jan. 2019.
Paper # SDM2018-86 
Date of Issue 2019-01-22 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2019-01-29 - 2019-01-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2019-01-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique 
Sub Title (in English)  
Keyword(1) Ferroelectric  
Keyword(2) Hf0.5Zr0.5O2  
Keyword(3) Al nanocluster  
Keyword(4) Al doping  
Keyword(5) FeFET memory  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Tadashi Yamaguchi  
1st Author's Affiliation Renesas Electronics Corp. (Renesas)
2nd Author's Name Tiantian Zhang  
2nd Author's Affiliation Renesas Electronics Corp. (Renesas)
3rd Author's Name Kazuyuki Omori  
3rd Author's Affiliation Renesas Electronics Corp. (Renesas)
4th Author's Name Yasuhiro Shimada  
4th Author's Affiliation Renesas Electronics Corp. (Renesas)
5th Author's Name Yorinobu Kunimune  
5th Author's Affiliation Renesas Electronics Corp. (Renesas)
6th Author's Name Takashi Ide  
6th Author's Affiliation Renesas Electronics Corp. (Renesas)
7th Author's Name Masao Inoue  
7th Author's Affiliation Renesas Electronics Corp. (Renesas)
8th Author's Name Masazumi Matsuura  
8th Author's Affiliation Renesas Electronics Corp. (Renesas)
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Speaker Author-1 
Date Time 2019-01-29 13:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2018-86 
Volume (vol) vol.118 
Number (no) no.429 
Page pp.21-26 
#Pages 6 
Date of Issue 2019-01-22 (SDM) 

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