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Paper Abstract and Keywords
Presentation 2019-05-16 16:15
Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode
Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14
Abstract (in Japanese) (See Japanese page) 
(in English) We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For showing some of the important features of realizing artificial neural network in a hardware-aspect, resistive random access memory has been drawing researchers’ attention since the research booming of artificial intelligence. Here we are trying to reveal the underlaying switching mechanism to take ReRAM to an applicable stage. We focused on the two reported hypotheses of mechanisms, VCM and ECM, using Ta and Cu top electrodes (TEs), respectively. For the measurement results on initial states and during-switching, we clarified that samples with Ta-TE show strong dependency of switching capability on the initial resistance. For samples with Cu-TE applied, we found an mutual point of fabrication conditions that were showing perfectly coincided forming processes, despite of unpredicted lower initial resistances caused by diffusion of Cu atoms. This suggests that the insulator fabricated with 0% oxygen ambient has weak dependency on top electrode.
Keyword (in Japanese) (See Japanese page) 
(in English) resistive memory / artificial synapse / multilevel switching / tantalum oxide / top electrode / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 34, ED2019-16, pp. 29-34, May 2019.
Paper # ED2019-16 
Date of Issue 2019-05-09 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-16 CPM2019-7 SDM2019-14

Conference Information
Committee SDM ED CPM  
Conference Date 2019-05-16 - 2019-05-17 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Materials, Fabrication, and Characterization of Functional Devices, and Related Technology 
Paper Information
Registration To ED 
Conference Code 2019-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode 
Sub Title (in English)  
Keyword(1) resistive memory  
Keyword(2) artificial synapse  
Keyword(3) multilevel switching  
Keyword(4) tantalum oxide  
Keyword(5) top electrode  
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1st Author's Name Yuanlin Li  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Atsushi Tsurumaki-Fukuchi  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Masashi Arita  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Takashi Morie  
4th Author's Affiliation Kyushu Institute of Technology (Kyushu Inst. Tech.)
5th Author's Name Yasuo Takahashi  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2019-05-16 16:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2019-16, CPM2019-7, SDM2019-14 
Volume (vol) vol.119 
Number (no) no.34(ED), no.35(CPM), no.36(SDM) 
Page pp.29-34 
#Pages 6 
Date of Issue 2019-05-09 (ED, CPM, SDM) 

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