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| Presentation | 2019-06-21 15:45 New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST)  SDM2019-32 Link to ES Tech. Rep. Archives: SDM2019-32 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The characteristics of the VO2-channel Mott transistor is systematically studied. The transfer characteristics shows a complete phase transition of the VO2 channel from the insulating state to the metallic state as a func-tion of the gate voltage. Interestingly, the transfer char-acteristics has a universal point at a critical gate voltage, where the channel current is almost independent of the applied drain voltage. When the gate voltage is swept across this universal point, the channel current discon-tinuously jumps showing an exceptionally low sub-threshold swing < 0.5 mV/dec, although accompa-nied by a hysteresis. The observed discontinuity in the channel current can be well understood by the negative resistance instability of the phase-coexisting VO2 channel, which can be utilized for designing a ultra-low-voltage switch in the Mott transistor. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Metal-insulator transition / Mott transistor / VO2 / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 119, no. 96, SDM2019-32, pp. 35-38, June 2019. | |
| Paper # | SDM2019-32 | |
| Date of Issue | 2019-06-14 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2019-32 Link to ES Tech. Rep. Archives: SDM2019-32 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2019-06-21 - 2019-06-21 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Univ. VBL3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2019-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching |
| Sub Title (in English) | |
| Keyword(1) | Metal-insulator transition |
| Keyword(2) | Mott transistor |
| Keyword(3) | VO2 |
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| 1st Author's Name | Takeaki Yajima |
| 1st Author's Affiliation | The University of Tokyo (Univ. of Tokyo) |
| 2nd Author's Name | Yusuke Samata |
| 2nd Author's Affiliation | JST PRESTO (JST) |
| 3rd Author's Name | Tomonori Nishimura |
| 3rd Author's Affiliation | JST PRESTO (JST) |
| 4th Author's Name | Akira Toriumi |
| 4th Author's Affiliation | JST PRESTO (JST) |
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| Speaker | Author-1 |
| Date Time | 2019-06-21 15:45:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2019-32 |
| Volume (vol) | vol.119 |
| Number (no) | no.96 |
| Page | pp.35-38 |
| #Pages | 4 |
| Date of Issue | 2019-06-14 (SDM) |
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