| Paper Abstract and Keywords |
| Presentation |
2019-10-24 13:50
The process technology of new piezoelectric materials BiFeO3 and dependence of substrate Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College) SDM2019-63 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroelectric memories, sensors and solar cells. The oxygen radicals were produced by a microwave excited high-density plasma. It was found from X-ray diffraction that the crystallization temperature of the BFO film could be reduced to 350 oC by applying the oxygen radical treatment before the annealing. The (110) peak area which shows the crystallinity of BFO was by 4 times than that of the BFO film annealed at 500 oC without the oxygen radical treatment. From results of XRD and X-ray photoelectron spectroscopy, the stoichiometry was dramatically improved and this suggests that the oxygen radical treatment effectively creates the nucleation cites of BiFeO3 and reduces oxygen vacancy defects.
It is important that the BiFeO3 film on DyScO3 Substrate. The lattice constant of DyScO3 (a=0.394nm) is similar to the lattice constant of BiFeO3. We developed the BiFeO3 film on the DyScO3 substrate. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
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| Reference Info. |
IEICE Tech. Rep., vol. 119, no. 239, SDM2019-63, pp. 51-54, Oct. 2019. |
| Paper # |
SDM2019-63 |
| Date of Issue |
2019-10-16 (SDM) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
SDM2019-63 |
| Conference Information |
| Committee |
SDM |
| Conference Date |
2019-10-23 - 2019-10-24 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Niche, Tohoku Univ. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Process Science and New Process Technology |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2019-10-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
The process technology of new piezoelectric materials BiFeO3 and dependence of substrate |
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| 1st Author's Name |
Fuminobu Imaizumi |
| 1st Author's Affiliation |
National Institute of Technology, Oyama College (NIT, Oyama College) |
| 2nd Author's Name |
Rikuto Nakada |
| 2nd Author's Affiliation |
National Institute of Technology, Oyama College (NIT, Oyama College) |
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| Speaker |
Author-1 |
| Date Time |
2019-10-24 13:50:00 |
| Presentation Time |
30 minutes |
| Registration for |
SDM |
| Paper # |
SDM2019-63 |
| Volume (vol) |
vol.119 |
| Number (no) |
no.239 |
| Page |
pp.51-54 |
| #Pages |
4 |
| Date of Issue |
2019-10-16 (SDM) |