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Paper Abstract and Keywords
Presentation 2019-10-24 15:40
Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor
Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-66 Link to ES Tech. Rep. Archives: SDM2019-66
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports on gas concentration imaging using lateral overflow integration trench capacitor(LOFITreC) CMOS absorption image sensor with signal-to-noise ratio (SNR) over 70 dB and high light resistance in the ultraviolet wavelength band. Two-dimensional absorption imaging of the concentration of NO2 gas flowing in a semiconductor process chamber was experimented using the developed sensor and a 405 nm LED light source. As a result, a good calibration curve of NO2 gas was obtained, and the concentration distribution of NO2 gas flowing in a process chamber was visualized.
Keyword (in Japanese) (See Japanese page) 
(in English) Spectral imaging / Concentration sensor / Absorption spectrometry / CMOS image sensor / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 239, SDM2019-66, pp. 65-68, Oct. 2019.
Paper # SDM2019-66 
Date of Issue 2019-10-16 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-66 Link to ES Tech. Rep. Archives: SDM2019-66

Conference Information
Committee SDM  
Conference Date 2019-10-23 - 2019-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2019-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor 
Sub Title (in English)  
Keyword(1) Spectral imaging  
Keyword(2) Concentration sensor  
Keyword(3) Absorption spectrometry  
Keyword(4) CMOS image sensor  
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1st Author's Name Keigo Takahashi  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Yhang Ricardo Sipauba Carvalho da Silva  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Rihito Kuroda  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yasuyuki Fujihara  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Maasa Murata  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Hidekazu Ishii  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Tatsuo Morimoto  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
8th Author's Name Tomoyuki Suwa  
8th Author's Affiliation Tohoku University (Tohoku Univ.)
9th Author's Name Akinobu Teramoto  
9th Author's Affiliation Tohoku University (Tohoku Univ.)
10th Author's Name Shigetoshi Sugawa  
10th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2019-10-24 15:40:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2019-66 
Volume (vol) vol.119 
Number (no) no.239 
Page pp.65-68 
#Pages
Date of Issue 2019-10-16 (SDM) 


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