Paper Abstract and Keywords |
Presentation |
2019-10-24 15:40
Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-66 Link to ES Tech. Rep. Archives: SDM2019-66 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper reports on gas concentration imaging using lateral overflow integration trench capacitor(LOFITreC) CMOS absorption image sensor with signal-to-noise ratio (SNR) over 70 dB and high light resistance in the ultraviolet wavelength band. Two-dimensional absorption imaging of the concentration of NO2 gas flowing in a semiconductor process chamber was experimented using the developed sensor and a 405 nm LED light source. As a result, a good calibration curve of NO2 gas was obtained, and the concentration distribution of NO2 gas flowing in a process chamber was visualized. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Spectral imaging / Concentration sensor / Absorption spectrometry / CMOS image sensor / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 119, no. 239, SDM2019-66, pp. 65-68, Oct. 2019. |
Paper # |
SDM2019-66 |
Date of Issue |
2019-10-16 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2019-66 Link to ES Tech. Rep. Archives: SDM2019-66 |
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