Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2019-10-24 10:50
Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications
Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech) SDM2019-61
Abstract (in Japanese) (See Japanese page) 
(in English) In this report, the effects of the TiN encapsulating layer on the low temperature formation of the PdErSi/Si(100) with dopant segregation (DS) process was investigated. To control the profile of the dopants before the DS process, the thickness of the TiN encapsulating layer was varied from 0 to 30 nm. This is to increase the number of segregated dopants along the interface after the DS process. Low SBH for hole of 0.20 eV with ideality factor of 1.08 for samples 25 nm TiN on 20 nm PdEr was realized. It was also found that the interface qualities of the PdErSi/Si(100) were improved by utilizing the TiN encapsulating layer as shown by the reduction of the density of interface states to 10-11 eV-1cm-2.
Keyword (in Japanese) (See Japanese page) 
(in English) PdEr-Silicide / Dopant Segregation Process / Schottky Barrier Height / TiN Encapsulating Layer / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 239, SDM2019-61, pp. 39-43, Oct. 2019.
Paper # SDM2019-61 
Date of Issue 2019-10-16 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2019-61

Conference Information
Committee SDM  
Conference Date 2019-10-23 - 2019-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2019-10-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications 
Sub Title (in English)  
Keyword(1) PdEr-Silicide  
Keyword(2) Dopant Segregation Process  
Keyword(3) Schottky Barrier Height  
Keyword(4) TiN Encapsulating Layer  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Rengie Mark D. Mailig  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Yuichiro Aruga  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Min Gee Kim  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Shun-ichiro Ohmi  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2019-10-24 10:50:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2019-61 
Volume (vol) vol.119 
Number (no) no.239 
Page pp.39-43 
#Pages 5 
Date of Issue 2019-10-16 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan