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Paper Abstract and Keywords
Presentation 2019-11-21 13:55
Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD
Shunichi Yokoi, Keita Furuoka, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.) ED2019-41 CPM2019-60 LQE2019-84
Abstract (in Japanese) (See Japanese page) 
(in English) SiO2 has a relatively large band gap of approximately 9 eV. Therefore, by fabricating SiO2/Al2O3 double insulators, GaN-based MIS-structures that have good insulator/semiconductor interfaces and low gate leakage currents can be obtained. Firstly, we conducted the post-deposition annealing (PDA) in various annealing atmosphere and evaluated the effect of annealing ambient on device characteristics of ALD-SiO2/AlGaN/GaN MIS-HEMTs. We also evaluated the chemical characteristics of SiO2/AlGaN interfaces by XPS and SIMS. It was confirmed that O2-PDA reduces the amount of H impurity at a lower temperature than N2-PDA. Finally, SiO2/Al2O3/AlGaN/GaN MIS-HEMTs were fabricated using ALD, and the electrical characteristics were investigated. As a result, the MIS-HEMT fabricated using O2-plasma treatment after the SiO2 deposition showed good I-V characteristics.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MIS / HEMT / ALD / PDA / Al2O3 / SiO2 /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 302, ED2019-41, pp. 37-40, Nov. 2019.
Paper # ED2019-41 
Date of Issue 2019-11-14 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2019-41 CPM2019-60 LQE2019-84

Conference Information
Committee CPM LQE ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. (Hamamatsu) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Semiconductor Devices, Materials, Related Technologies 
Paper Information
Registration To ED 
Conference Code 2019-11-CPM-LQE-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Estimation of device characteristics of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MIS  
Keyword(3) HEMT  
Keyword(4) ALD  
Keyword(5) PDA  
Keyword(6) Al2O3  
Keyword(7) SiO2  
Keyword(8)  
1st Author's Name Shunichi Yokoi  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Keita Furuoka  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Toshiharu Kubo  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
4th Author's Name Takashi Egawa  
4th Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
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Speaker Author-1 
Date Time 2019-11-21 13:55:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2019-41, CPM2019-60, LQE2019-84 
Volume (vol) vol.119 
Number (no) no.302(ED), no.303(CPM), no.304(LQE) 
Page pp.37-40 
#Pages 4 
Date of Issue 2019-11-14 (ED, CPM, LQE) 

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