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Paper Abstract and Keywords
Presentation 2019-11-22 12:05
Planar-type electron source based on a graphene/h-BN heterostructure
Tomoya Igari (Univ. of Tsukuba/AIST), Masayoshi Nagao (AIST), Kazutaka Mitsuishi (NIMS), Masahiro Sasaki, Yoichi Yamada (Univ. of Tsukuba), Katsuhisa Murakami (AIST/Univ. of Tsukuba) ED2019-75
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, a novel planar-type electron emission device based on atomic layer materials of graphene/$h$-BN heterostructure was developed. The emission current reached a few A/cm$^2$, which was ten times higher than that from a conventional GOS device. The full width at half maximum of the energy distribution of electrons emitted from the graphene/$h$-BN emission device was smaller than 0.6 eV. This is narrower than that from conventional Schottky emitters. In the small current region, energy spread was as small as 0.3 eV, approaching the range of a conventional cold field emitters.These superior properties of the present device, such as high emission current with low energy spread and low operation voltage, open new applications.
Keyword (in Japanese) (See Japanese page) 
(in English) graphene / hexagonal boron nitride / planar-type electron source / / / / /  
Reference Info. IEICE Tech. Rep., vol. 119, no. 305, ED2019-75, pp. 63-66, Nov. 2019.
Paper # ED2019-75 
Date of Issue 2019-11-14 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2019-11-21 - 2019-11-22 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2019-11-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Planar-type electron source based on a graphene/h-BN heterostructure 
Sub Title (in English)  
Keyword(1) graphene  
Keyword(2) hexagonal boron nitride  
Keyword(3) planar-type electron source  
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1st Author's Name Tomoya Igari  
1st Author's Affiliation University of Tsukuba/National Institute of Advanced Industrial Science and Technology (Univ. of Tsukuba/AIST)
2nd Author's Name Masayoshi Nagao  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Kazutaka Mitsuishi  
3rd Author's Affiliation National Institute for Materials Science (NIMS)
4th Author's Name Masahiro Sasaki  
4th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
5th Author's Name Yoichi Yamada  
5th Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
6th Author's Name Katsuhisa Murakami  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology/University of Tsukuba (AIST/Univ. of Tsukuba)
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Speaker Author-1 
Date Time 2019-11-22 12:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2019-75 
Volume (vol) vol.119 
Number (no) no.305 
Page pp.63-66 
#Pages 4 
Date of Issue 2019-11-14 (ED) 

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