| Paper Abstract and Keywords |
| Presentation |
2020-11-20 11:30
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements -- Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) SDM2020-30 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
(Not available yet) |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
/ / / / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 120, no. 239, SDM2020-30, pp. 36-40, Nov. 2020. |
| Paper # |
SDM2020-30 |
| Date of Issue |
2020-11-12 (SDM) |
| ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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| Download PDF |
SDM2020-30 |