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Paper Abstract and Keywords
Presentation 2020-11-26 10:25
Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells
Takumi Yamaguchi, Kyosuke Ariga, Keito Mori, Atushi A. Yamaguchi (KIT) ED2020-2 CPM2020-23 LQE2020-53
Abstract (in Japanese) (See Japanese page) 
(in English) Internal quantum efficiency in III-nitride semiconductor light emitting layers is usually estimated from the experimental results of the temperature dependence of photoluminescence intensity. In this method, the internal quantum efficiency at extremely low temperature is assumed as 100%, and the decrease in emission intensity with increasing temperature is considered to be caused only by the decrease in internal quantum efficiency. Since the principle of the method is easy to understand and the measurement is relatively simple, it is frequently used. However, the method cannot always provide accurate values of the internal quantum efficiency. In this study, we have measured the temperature dependence of emission intensity at various excitation wavelengths for the same InGaN quantum-well sample, and have shown that the estimated internal quantum efficiency strongly depends on the excitation wavelength. Furthermore, the experimental results have been semi-quantitatively reproduced by the simple theoretical model in which the temperature dependence of excited carrier density due to temperature-induced bandgap shift.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN quantum wells / Internal quantum efficiency / temperature-induced photoluminescence quenching / / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 256, LQE2020-53, pp. 5-8, Nov. 2020.
Paper # LQE2020-53 
Date of Issue 2020-11-19 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2020-2 CPM2020-23 LQE2020-53

Conference Information
Committee LQE CPM ED  
Conference Date 2020-11-26 - 2020-11-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2020-11-LQE-CPM-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells 
Sub Title (in English)  
Keyword(1) InGaN quantum wells  
Keyword(2) Internal quantum efficiency  
Keyword(3) temperature-induced photoluminescence quenching  
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1st Author's Name Takumi Yamaguchi  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
2nd Author's Name Kyosuke Ariga  
2nd Author's Affiliation Kanazawa Institute of Technology (KIT)
3rd Author's Name Keito Mori  
3rd Author's Affiliation Kanazawa Institute of Technology (KIT)
4th Author's Name Atushi A. Yamaguchi  
4th Author's Affiliation Kanazawa Institute of Technology (KIT)
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Speaker Author-1 
Date Time 2020-11-26 10:25:00 
Presentation Time 20 minutes 
Registration for LQE 
Paper # ED2020-2, CPM2020-23, LQE2020-53 
Volume (vol) vol.120 
Number (no) no.254(ED), no.255(CPM), no.256(LQE) 
Page pp.5-8 
#Pages 4 
Date of Issue 2020-11-19 (ED, CPM, LQE) 

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