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Paper Abstract and Keywords
Presentation 2020-12-02 15:00
Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes.
Kazutaka Yamada, Tsunenobu Kimoto (Kyoto Univ.), Yusuke Nishi (Kyoto Univ./NIT, Maizuru College) EID2020-11 SDM2020-45 Link to ES Tech. Rep. Archives: EID2020-11 SDM2020-45
Abstract (in Japanese) (See Japanese page) 
(in English) In this study, we have investigated the resistive switching (RS) characteristics of Ni/Ta2O5/TiN stack structure devices. Two different RS characteristics were observed in the same device. After forming, it showed abrupt (digital) RS characteristics. On the other hand, the device that transitioned to a particular state by the application of voltage to the initial state showed gradual (analog) RS characteristics. Based on the electrical characteristics of the devices and the distribution of oxygen vacancies in the Ta2O5 layer, we propose an RS operation model.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / Titanium nitride / Tantalum oxide / Electrode materials / / / /  
Reference Info. IEICE Tech. Rep., vol. 120, no. 273, SDM2020-45, pp. 42-45, Dec. 2020.
Paper # SDM2020-45 
Date of Issue 2020-11-25 (EID, SDM) 
ISSN Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EID2020-11 SDM2020-45 Link to ES Tech. Rep. Archives: EID2020-11 SDM2020-45

Conference Information
Committee EID SDM ITE-IDY  
Conference Date 2020-12-02 - 2020-12-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2020-12-EID-SDM-IDY 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Coexistence of digital and analog resistive switching in Ta2O5-based ReRAM cells with TiN electrodes. 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) Titanium nitride  
Keyword(3) Tantalum oxide  
Keyword(4) Electrode materials  
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1st Author's Name Kazutaka Yamada  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Tsunenobu Kimoto  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Yusuke Nishi  
3rd Author's Affiliation Kyoto University/National Institute of Technology, Maizuru College (Kyoto Univ./NIT, Maizuru College)
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Speaker Author-1 
Date Time 2020-12-02 15:00:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # EID2020-11, SDM2020-45 
Volume (vol) vol.120 
Number (no) no.272(EID), no.273(SDM) 
Page pp.42-45 
#Pages
Date of Issue 2020-11-25 (EID, SDM) 


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