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Paper Abstract and Keywords
Presentation 2021-06-22 13:50
[Memorial Lecture] Operation mechanism of Si/HZO ferroelectric FETs -- Role of MOS (MFS) interface --
Kasidit Toprasertpong, Tsung-En Lee, Zaoyang Lin, Kento Tahara, Kouhei Watanabe, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo) SDM2021-23
Abstract (in Japanese) (See Japanese page) 
(in English) In this talk, we will introduce our findings on the mechanisms at the MFIS interface and their impacts on the memory characteristics of Si/HfO2-based ferroelectric FETs. The charge trapping near the interfacial layer, which exists between the HfO2-based ferroelectric insulator and the Si channel, is the key factor that determines the device operation. Under positive gate voltage, the electron-trap-assisted polarization reversal is the mechanism that drives the memory characteristics of n-channel ferroelectric FETs, while the similar mechanism cannot be observed for holes under negative voltage. Moreover, it is also found that the MFIS interface-state density is an important factor that affects the memory characteristics. We show that low interface-state density at the Hf0.5Zr0.5O2/Si interface can be achieved by performing the ferroelectric-phase crystallization with low-temperature annealing.
Keyword (in Japanese) (See Japanese page) 
(in English) Ferroelectric FET / Interface / Polarization reversal / Device operation / Memory characteristics / / /  
Reference Info. IEICE Tech. Rep., vol. 121, no. 71, SDM2021-23, pp. 7-12, June 2021.
Paper # SDM2021-23 
Date of Issue 2021-06-15 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2021-06-22 - 2021-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2021-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Operation mechanism of Si/HZO ferroelectric FETs 
Sub Title (in English) Role of MOS (MFS) interface 
Keyword(1) Ferroelectric FET  
Keyword(2) Interface  
Keyword(3) Polarization reversal  
Keyword(4) Device operation  
Keyword(5) Memory characteristics  
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Keyword(7)  
Keyword(8)  
1st Author's Name Kasidit Toprasertpong  
1st Author's Affiliation The University of Tokyo (Univ. Tokyo)
2nd Author's Name Tsung-En Lee  
2nd Author's Affiliation The University of Tokyo (Univ. Tokyo)
3rd Author's Name Zaoyang Lin  
3rd Author's Affiliation The University of Tokyo (Univ. Tokyo)
4th Author's Name Kento Tahara  
4th Author's Affiliation The University of Tokyo (Univ. Tokyo)
5th Author's Name Kouhei Watanabe  
5th Author's Affiliation The University of Tokyo (Univ. Tokyo)
6th Author's Name Mitsuru Takenaka  
6th Author's Affiliation The University of Tokyo (Univ. Tokyo)
7th Author's Name Shinichi Takagi  
7th Author's Affiliation The University of Tokyo (Univ. Tokyo)
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Speaker
Date Time 2021-06-22 13:50:00 
Presentation Time 40 
Registration for SDM 
Paper # SDM2021-23 
Volume (vol) 121 
Number (no) no.71 
Page pp.7-12 
#Pages
Date of Issue 2021-06-15 (SDM) 


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