Paper Abstract and Keywords |
Presentation |
2022-01-31 15:00
[Invited Talk]
**** Kei Sumita, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinich Takagi (Univ.of Tokyo) SDM2021-71 Link to ES Tech. Rep. Archives: SDM2021-71 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Mobility reduction due to surface roughness scattering is a critical concern for Extremely-Thin-Body (ETB) nanosheet channels. However, the conventional scattering model cannot explain the experimental results with realistic roughness. In this study, we have proposed a new model of surface roughness scattering, which can explain the experimental mobility of SOI, GOI and InAs-OI nMOSFETs with roughness parameters obtained experimentally from TEM images. Based on this model, we deliver the assessment on the optimum ETB channels down to 2 nm. As a result, the anisotropic valley with heavy confinement mass is expected to have the high immunity to mobility reduction by surface roughness. In particular, (111) GOI is most expected thanks to the strong anisotropy of the L valley and have the excellent surface-roughness-limited electron mobility even in the 2-nm-thick channels, which is an advantage over 2D materials. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Extremely-Thin-Body / Nanosheet / MOSFET / Surface Roughness Scattering / Mobility / / / |
Reference Info. |
IEICE Tech. Rep., vol. 121, no. 365, SDM2021-71, pp. 12-15, Jan. 2022. |
Paper # |
SDM2021-71 |
Date of Issue |
2022-01-24 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2021-71 Link to ES Tech. Rep. Archives: SDM2021-71 |
Conference Information |
Committee |
SDM |
Conference Date |
2022-01-31 - 2022-01-31 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Online |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2022-01-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
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(See Japanese page) |
Title (in English) |
**** |
Sub Title (in English) |
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Keyword(1) |
Extremely-Thin-Body |
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Nanosheet |
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MOSFET |
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Surface Roughness Scattering |
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Mobility |
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1st Author's Name |
Kei Sumita |
1st Author's Affiliation |
University of Tokyo (Univ.of Tokyo) |
2nd Author's Name |
Chia-Tsong Chen |
2nd Author's Affiliation |
University of Tokyo (Univ.of Tokyo) |
3rd Author's Name |
Kasidit Toprasertpong |
3rd Author's Affiliation |
University of Tokyo (Univ.of Tokyo) |
4th Author's Name |
Mitsuru Takenaka |
4th Author's Affiliation |
University of Tokyo (Univ.of Tokyo) |
5th Author's Name |
Shinich Takagi |
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University of Tokyo (Univ.of Tokyo) |
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Speaker |
Author-1 |
Date Time |
2022-01-31 15:00:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2021-71 |
Volume (vol) |
vol.121 |
Number (no) |
no.365 |
Page |
pp.12-15 |
#Pages |
4 |
Date of Issue |
2022-01-24 (SDM) |
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