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Paper Abstract and Keywords
Presentation 2022-05-27 14:40
Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications
Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17
Abstract (in Japanese) (See Japanese page) 
(in English) SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effective for fabricating Si photonics devices such as an optical multiplexer/demultiplexer with a thermally stable operation. A low-loss optical waveguide is reported using a SiNx film deposited by reactive sputtering at a relatively low deposition temperature of 200ºC. An AlN film with a refractive index as large as 2.0, similar to SiNx, is also deposited by reactive sputtering. No electro-optic effect is present in SiNx, while AlN ideally possesses an electro-optic coefficient on the order of 0.1 pm/V, potentially realizing optical modulation/switching devices including an optical intensity modulator.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon photonics / Reactive sputtering / Low-Temperature deposition / Silicon nitride / Aluminum nitride / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 54, SDM2022-17, pp. 13-16, May 2022.
Paper # SDM2022-17 
Date of Issue 2022-05-20 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2022-10 CPM2022-4 SDM2022-17

Conference Information
Committee SDM ED CPM  
Conference Date 2022-05-27 - 2022-05-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional Device Materials, Fabrication, Characterization, and Related Technology 
Paper Information
Registration To SDM 
Conference Code 2022-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications 
Sub Title (in English)  
Keyword(1) Silicon photonics  
Keyword(2) Reactive sputtering  
Keyword(3) Low-Temperature deposition  
Keyword(4) Silicon nitride  
Keyword(5) Aluminum nitride  
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Keyword(7)  
Keyword(8)  
1st Author's Name Takaaki Fukushima  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
2nd Author's Name Jose A. Piedra Lorenzana  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
3rd Author's Name Rui Tsuchiya  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
4th Author's Name Takeshi Hizawa  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
5th Author's Name Yasuhiko Ishikawa  
5th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
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Speaker Author-1 
Date Time 2022-05-27 14:40:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2022-10, CPM2022-4, SDM2022-17 
Volume (vol) vol.122 
Number (no) no.52(ED), no.53(CPM), no.54(SDM) 
Page pp.13-16 
#Pages 4 
Date of Issue 2022-05-20 (ED, CPM, SDM) 

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