Paper Abstract and Keywords |
Presentation |
2022-11-11 09:30
[Invited Talk]
Toward Super Temporal Resolution by Suppression of Mixing Effects of Electrons Takeharu Goji Etoh (Osaka Univ.), Kazuhiro Shimonomura, Taeko Ando, Yoshiyuki Matsunaga, Yutaka Hirose (Ritsumeikan Univ.), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.), Yoshinari Kamakura (OIT), Hideki Mutoh (Link Research) SDM2022-71 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The theoretical temporal resolution limit of silicon (Si) image sensors is 11.1 ps. The super temporal resolution (STR) is defined as a frame interval less than this limit. The temporal resolution of burst image sensors is significantly affected by “mixing” of signal electrons traveling from different starting positions. For example, the penetration depths of photons incident to a surface of a photodiode (PD) disperse exponentially, resulting in mixing of the photoelectrons generating at distributed depths and arriving at the other end of the PD. The temporal resolution is proportional to the standard deviation of the arrival time. Toward the STR imaging, this paper proposes measures to suppress various mixing phenomena during the travel of the signal electrons: (1) a germanium photodiode (Ge PD) for visible light to practically eliminate the effect of the vertical mixing caused by the distribution of the penetration depth, (2) an inverted pyramid PD to suppress the horizontal mixing, keeping a 100% fill factor, (3) a standard column PD with an negative potential on the vertical walls to squeeze the trajectory bundle of electrons falling on the center gate on the front side, (4) vertical transfer gates surrounding the PD, and (5) a resistive center gate to linearize the potential profile to maximize the horizontal drift velocity to minimize the mixing together with the squeezed electron bundle. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
High-speed Image sensor / Super temporal resolution / Pyramid photodiode / Resistive gate / Germanium / vertical transfer gate / / |
Reference Info. |
IEICE Tech. Rep., vol. 122, no. 247, SDM2022-71, pp. 32-39, Nov. 2022. |
Paper # |
SDM2022-71 |
Date of Issue |
2022-11-03 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2022-71 |
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