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Paper Abstract and Keywords
Presentation 2022-11-11 13:00
[Invited Talk] Understanding of Electron Mobility Limiting Factor in Cryo-CMOS
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2022-74
Abstract (in Japanese) (See Japanese page) 
(in English) To realize highly-integrated quantum computers, the Cryo-CMOS circuit has attracted significant attention for control/read-out qubits at the cryogenic temperature below several Kelvin. Thus, a physical understanding of MOSFET operation at the cryogenic temperature is required for designing the Cryo-CMOS circuit. Various device parameters are known to deviate from conventional theoretical values in cryogenic operation, and thus elucidation of the physical mechanism is required. Inversion layer mobility, which determines the drive current of the MOSFET, is limited by the Coulomb and surface roughness scattering at the cryogenic temperature. However, the carrier scattering mechanism at the temperature of several Kelvin or less has not been sufficiently discussed and the physics-based cryogenic mobility model has not been established. In this study, we focused on the effect of interface trap charges as Coulomb scatterers on cryogenic mobility to reveal the physical origin of Coulomb scattering. We systematically investigated the correlation between the interface trap charges and the electron mobility at 2.5 K by utilizing Si-MOSFETs fabricated on different surface orientations.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum computer / Cryo-CMOS / Electron mobility / Surface orientation / Coulomb scattering / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 247, SDM2022-74, pp. 49-49, Nov. 2022.
Paper # SDM2022-74 
Date of Issue 2022-11-03 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2022-11-10 - 2022-11-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Online 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2022-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Understanding of Electron Mobility Limiting Factor in Cryo-CMOS 
Sub Title (in English)  
Keyword(1) Quantum computer  
Keyword(2) Cryo-CMOS  
Keyword(3) Electron mobility  
Keyword(4) Surface orientation  
Keyword(5) Coulomb scattering  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Oka  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Takumi Inaba  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Shota Iizuka  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Hidehiro Asai  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Kimihiko Kato  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Takahiro Mori  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2022-11-11 13:00:00 
Presentation Time 60 minutes 
Registration for SDM 
Paper # SDM2022-74 
Volume (vol) vol.122 
Number (no) no.247 
Page p.49 
#Pages 1 
Date of Issue 2022-11-03 (SDM) 

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