| 講演抄録/キーワード |
| 講演名 |
2022-12-08 14:20
3次元磁気メモリの実現に向けたCoPtの電解めっき膜 ○黄 童雙・高村陽太(東工大)・齋藤美紀子・エムディー マフムドゥル ハサン・荒木大輝・本間敬之(早大)・葛西伸哉(物質・材料研究機構)・山田啓介(岐阜大)・園部義明(早大)・小野輝男(京大)・中川茂樹(東工大) MRIS2022-20 |
| 抄録 |
(和) |
CoPt alloy is the appropriate material for the stacking layers owing to strong PMA for Co-rich alloy and controllability of Ku by changing the Co composition. CoPt stacking layers with different alternatively Ku are required. To deposit such stacking layers, the electrodeposition condition has been studied. CoPt layers with various compositions were successfully deposited by adjusting the applied voltage. However, the surface thin film deposited by DC electrodeposition was too rough for spin device fabrication. We conducted pulse electrodeposition and obtained an ultra-thin film with smooth morphology and good magnetic property. |
| (英) |
CoPt alloy is the appropriate material for the stacking layers owing to strong PMA for Co-rich alloy and controllability of Ku by changing the Co composition. CoPt stacking layers with different alternatively Ku are required. To deposit such stacking layers, the electrodeposition condition has been studied. CoPt layers with various compositions were successfully deposited by adjusting the applied voltage. However, the surface thin film deposited by DC electrodeposition was too rough for spin device fabrication. We conducted pulse electrodeposition and obtained an ultra-thin film with smooth morphology and good magnetic property. |
| キーワード |
(和) |
/ / / / / / / |
| (英) |
Three-dimensional domain wall motion memory / Electrodeposition / CoPt alloy / Perpendicular magnetic anisotropy / Spin-orbit torque / / / |
| 文献情報 |
信学技報, vol. 122, no. 297, MRIS2022-20, pp. 11-16, 2022年12月. |
| 資料番号 |
MRIS2022-20 |
| 発行日 |
2022-12-01 (MRIS) |
| ISSN |
Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| PDFダウンロード |
MRIS2022-20 |