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Paper Abstract and Keywords
Presentation 2022-12-22 16:50
[Poster Presentation] Characteristics of YbGaN and YbAlN epitaxial thin film resonators
Song Li, Junjun Jia, Takahiko Yanagitani (Waseda Univ.) US2022-64
Abstract (in Japanese) (See Japanese page) 
(in English) Bulk acoustic wave (BAW) resonators based on AlN or GaN piezoelectric thin films are suitable for GHz frequency filters for microwave communications due to their high sound velocity and low mechanical losses. However, low electromechanical coupling coefficient kt2 in the GaN is a problem because kt2 determines the filter bandwidth. Our group previously reported that improvement of kt2 by doping Yb into AlN and GaN.
c-axis oriented films over the entire wafer surface can be easily obtained when epitaxial growth is employed. This study investigated the structural effects of Yb doping on piezoelectric thin films. Epitaxial thin films of YbGaN, YbAlN, and ScAlN were fabricated by RF magnetron sputtering. The kt2 of the obtained thin films was evaluated and compared with theoretical values by first-principles calculations. Compared to the polycrystalline films, the epitaxial YbGaN thin films showed higher kt2, especially for higher Yb concentrations, which was close to the theoretical value obtained by first-principles calculations. This suggests that using epitaxial piezoelectric films in resonators is a feasible way to improve the performance of frequency filters.
Keyword (in Japanese) (See Japanese page) 
(in English) Epitaxial growth / YbGaN thin film / YbAlN thin film / ScAlN thin film / 4H-SiC conductive substrate / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 323, US2022-64, pp. 74-79, Dec. 2022.
Paper # US2022-64 
Date of Issue 2022-12-15 (US) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee EA US  
Conference Date 2022-12-22 - 2022-12-23 
Place (in Japanese) (See Japanese page) 
Place (in English) Satellite Campus Hiroshima 
Topics (in Japanese) (See Japanese page) 
Topics (in English) [Joint Meeting on Acoustics and Ultrasonics Subsociety] Engineering/Electro Acoustics, Ultrasonics, etc. 
Paper Information
Registration To US 
Conference Code 2022-12-EA-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characteristics of YbGaN and YbAlN epitaxial thin film resonators 
Sub Title (in English)  
Keyword(1) Epitaxial growth  
Keyword(2) YbGaN thin film  
Keyword(3) YbAlN thin film  
Keyword(4) ScAlN thin film  
Keyword(5) 4H-SiC conductive substrate  
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1st Author's Name Song Li  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Junjun Jia  
2nd Author's Affiliation Waseda University (Waseda Univ.)
3rd Author's Name Takahiko Yanagitani  
3rd Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2022-12-22 16:50:00 
Presentation Time 120 minutes 
Registration for US 
Paper # US2022-64 
Volume (vol) vol.122 
Number (no) no.323 
Page pp.74-79 
#Pages 6 
Date of Issue 2022-12-15 (US) 

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