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Paper Abstract and Keywords
Presentation 2023-06-26 10:50
[Memorial Lecture] Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation
Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori (AIST) SDM2023-28
Abstract (in Japanese) (See Japanese page) 
(in English) Cryogenic-CMOS technology has attracted significant attention for control/read-out qubits for realizing a large-scale-integrated quantum computer. At the cryogenic temperature, inversion layer carrier mobility, which determines the drive current of the MOSFET, is limited by the Coulomb and surface roughness scattering. Thus, physical understanding of these scattering factors at the cryogenic temperature becomes critically important. In particular, the temperature dependence of Coulomb scattering is more complicated than other scattering factors, and the physical origin of Coulomb scattering at the cryogenic temperature has not been fully discussed. In this study, we investigated the effect of interface states as a Coulomb scatterer on cryogenic electron mobility by utilizing Si MOSFETs fabricated on different surface orientations.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum computer / Cryogenic CMOS / mobility / Surface orientation / Coulomb scattering / Band edge state / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 89, SDM2023-28, pp. 5-6, June 2023.
Paper # SDM2023-28 
Date of Issue 2023-06-19 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2023-28

Conference Information
Committee SDM  
Conference Date 2023-06-26 - 2023-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. (Res. Inst. of Nanodevices) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2023-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic-MOSFET Operation 
Sub Title (in English)  
Keyword(1) Quantum computer  
Keyword(2) Cryogenic CMOS  
Keyword(3) mobility  
Keyword(4) Surface orientation  
Keyword(5) Coulomb scattering  
Keyword(6) Band edge state  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Oka  
1st Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
2nd Author's Name Takumi Inaba  
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
3rd Author's Name Shota Iizuka  
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
4th Author's Name Hidehiro Asai  
4th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
5th Author's Name Kimihiko Kato  
5th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
6th Author's Name Takahiro Mori  
6th Author's Affiliation National Institute of Advanced Industrial Science and Technology (AIST)
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Speaker Author-1 
Date Time 2023-06-26 10:50:00 
Presentation Time 40 minutes 
Registration for SDM 
Paper # SDM2023-28 
Volume (vol) vol.123 
Number (no) no.89 
Page pp.5-6 
#Pages 2 
Date of Issue 2023-06-19 (SDM) 

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