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Paper Abstract and Keywords
Presentation 2023-06-26 10:10
[Memorial Lecture] Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering
Kei Sumita, Min-Soo Kang, Chia-Tsong Chen, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi (U. Tokyo) SDM2023-27
Abstract (in Japanese) (See Japanese page) 
(in English) Nano-sheet channel has been recently adopted in logic CMOS as the next-generation channel for FinFET because the nano-sheet channel is a promising structure that effectively suppresses the short channel effects by channel thickness scaling. However, in extremely-thin body (ETB) channels, mobility degradation due to surface roughness (SR) scattering is a significant challenge. Therefore, high mobility 2D materials are attractive, while it is still unclear whether 2D or 3D semiconductors have the advantage in terms of mobility in the realistic channel thickness range of 2–3 nm. Therefore, the accurate prediction of mobility based on the SR scattering model is necessary. However, the conventional SR scattering model have limitations in terms of accuracy due to the linearized perturbation. In this study, we proposed a new model including the non-linear perturbation picture of SR scattering. The improvement of the accuracy of our model is demonstrated by explaining the electron mobility of MOSFETs by using the realistic parameters obtained by TEM. Also, we propose that the anisotropy of electron valleys can be utilized to maintain high mobility in ETB channels. Based on the proposed model, we quantitively evaluate the mobility down to 2 nm thickness for the various optimized channel structures. We experimentally demonstrate the mobility enhancement by the proposed valley engineering through the mobility characteristics of (111) InAs-On-Insulator nMOSFETs, and theoretically show that the ETB (111) Ge-On-Insulator structure can achieve the best mobility compared to other materials even at 2 nm.
Keyword (in Japanese) (See Japanese page) 
(in English) Nanosheet / MOSFET / Mobility / Surface Roughness Scattering / Extremely-thin-body / CMOS / Si / Ge  
Reference Info. IEICE Tech. Rep., vol. 123, no. 89, SDM2023-27, pp. 1-4, June 2023.
Paper # SDM2023-27 
Date of Issue 2023-06-19 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2023-27

Conference Information
Committee SDM  
Conference Date 2023-06-26 - 2023-06-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Hiroshima Univ. (Res. Inst. of Nanodevices) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2023-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optimum Design of Channel Material and Surface Orientation for Extremely Thin Body nMOSFETs Based on Nonlinear Modeling of Surface Roughness Scattering 
Sub Title (in English)  
Keyword(1) Nanosheet  
Keyword(2) MOSFET  
Keyword(3) Mobility  
Keyword(4) Surface Roughness Scattering  
Keyword(5) Extremely-thin-body  
Keyword(6) CMOS  
Keyword(7) Si  
Keyword(8) Ge  
1st Author's Name Kei Sumita  
1st Author's Affiliation University of Tokyo (U. Tokyo)
2nd Author's Name Min-Soo Kang  
2nd Author's Affiliation University of Tokyo (U. Tokyo)
3rd Author's Name Chia-Tsong Chen  
3rd Author's Affiliation University of Tokyo (U. Tokyo)
4th Author's Name Kasidit Toprasertpong  
4th Author's Affiliation University of Tokyo (U. Tokyo)
5th Author's Name Mitsuru Takenaka  
5th Author's Affiliation University of Tokyo (U. Tokyo)
6th Author's Name Shinichi Takagi  
6th Author's Affiliation University of Tokyo (U. Tokyo)
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Speaker Author-1 
Date Time 2023-06-26 10:10:00 
Presentation Time 40 minutes 
Registration for SDM 
Paper # SDM2023-27 
Volume (vol) vol.123 
Number (no) no.89 
Page pp.1-4 
#Pages 4 
Date of Issue 2023-06-19 (SDM) 

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