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| Presentation | 2023-08-01 16:35 Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs Ryusei Ri, Takayuki Mori (KIT), Hiroshi Oka, Takahiro Mori (AIST), Jiro Ida (KIT)  SDM2023-42 ICD2023-21 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | In this paper, we report the results of our ongoing analysis of a peculiar phenomenon in 200 nm SOI MOSFETs, which occurs only at very low temperatures due to substrate bias effects. The peculiar phenomena are the hump phenomenon observed in the current in the subthreshold region when the substrate bias is applied, and the hysteresis observed when continuous measurements are made. For Lvt (Low Vt) and Nvt (Normal Vt) products, in which the impurity concentration in the channel region is varied, the former does not exhibit much hump phenomenon, and a peculiar hysteresis is observed. In the latter, on the contrary, significant hump phenomena are observed, and the degree of hysteresis is very small. The voltage and temperature dependence of these phenomena were further investigated, and it was found that hysteresis occurs when a large substrate voltage is applied and that it does not occur when the temperature is increased from 3 K to 50 K. Furthermore, we found that the occurrence of the history is mitigated both by leaving the substrate for a period of time and by returning to room temperature. Although a hypothesis is still under investigation, it is assumed that there is a kind of trap at the SOI back surface interface that operates only at very low temperatures and that the back surface back channel is turned on, and the current acts as a trap/de-trapper. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Cryogenic / CMOS / SOI-MOSFET / Subthreshold slope / Quantum Computer / FD-SOI-MOSFET / / | |
| Reference Info. | IEICE Tech. Rep., vol. 123, no. 143, SDM2023-42, pp. 32-35, Aug. 2023. | |
| Paper # | SDM2023-42 | |
| Date of Issue | 2023-07-25 (SDM, ICD) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2023-42 ICD2023-21 |
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| Conference Information | |
| Committee | SDM ICD ITE-IST |
| Conference Date | 2023-08-01 - 2023-08-03 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hokkaido Univ. Multimedia Education Bldg. 3F |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2023-08-SDM-ICD-IST |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs |
| Sub Title (in English) | |
| Keyword(1) | Cryogenic |
| Keyword(2) | CMOS |
| Keyword(3) | SOI-MOSFET |
| Keyword(4) | Subthreshold slope |
| Keyword(5) | Quantum Computer |
| Keyword(6) | FD-SOI-MOSFET |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Ryusei Ri |
| 1st Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 2nd Author's Name | Takayuki Mori |
| 2nd Author's Affiliation | Kanazawa Institute of Technology (KIT) |
| 3rd Author's Name | Hiroshi Oka |
| 3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 4th Author's Name | Takahiro Mori |
| 4th Author's Affiliation | National Institute of Advanced Industrial Science and Technology (AIST) |
| 5th Author's Name | Jiro Ida |
| 5th Author's Affiliation | Kanazawa Institute of Technology (KIT) |
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| Speaker | Author-1 |
| Date Time | 2023-08-01 16:35:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2023-42, ICD2023-21 |
| Volume (vol) | vol.123 |
| Number (no) | no.143(SDM), no.144(ICD) |
| Page | pp.32-35 |
| #Pages | 4 |
| Date of Issue | 2023-07-25 (SDM, ICD) |
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