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Paper Abstract and Keywords
Presentation 2023-08-18 14:25
Evaluation of photoresponsive properties of metal/Nb:SrTiO3 junction -- Towards the realization of optoelectronic synapse device --
Shin Sata, Yumeng Zheng, Kentaro Kinoshita (Tokyo Univ. of Sci.) ED2023-11
Abstract (in Japanese) (See Japanese page) 
(in English) Sn-doped In_2O_3(ITO)/Nb:SrTiO_3(NSTO) junctions are expected to be a optoelectronic synapse with tunable characteristics because the relaxation time constant of photo-induced current can be controlled by applying voltage, but the mechanism has not been clarified. If various electrode materials with different work functions can be selected without being limited to transparent electrodes, the elucidation of the mechanism can be advanced to an advantage. In this study, Pt/NSTO junctions were fabricated using STO substrates with low Nb concentration to enable light irradiation from the substrate side. As a result of investigating the dependence of the relaxation characteristics of the photo-induced current of the junction on Nb concentration and applied voltage V_{SD}, it was confirmed that the higher the Nb concentration and the larger V_{SD}, the shorter the relaxation time constant. This result can be explained by the proposed Shockley-Read-Hall (SRH) model, which takes into account the concentration change of recombination centers due to V_{SD}.
Keyword (in Japanese) (See Japanese page) 
(in English) optoelectronic synapse / resistive random access memory / Nb:SrTiO_3 / photo-induced current / relaxation time constant / Schottky junction / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 155, ED2023-11, pp. 6-9, Aug. 2023.
Paper # ED2023-11 
Date of Issue 2023-08-11 (ED) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-11

Conference Information
Committee ED IEE-BMS IEE-MSS  
Conference Date 2023-08-18 - 2023-08-18 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2023-08-ED-BMS-MSS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of photoresponsive properties of metal/Nb:SrTiO3 junction 
Sub Title (in English) Towards the realization of optoelectronic synapse device 
Keyword(1) optoelectronic synapse  
Keyword(2) resistive random access memory  
Keyword(3) Nb:SrTiO_3  
Keyword(4) photo-induced current  
Keyword(5) relaxation time constant  
Keyword(6) Schottky junction  
Keyword(7)  
Keyword(8)  
1st Author's Name Shin Sata  
1st Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
2nd Author's Name Yumeng Zheng  
2nd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
3rd Author's Name Kentaro Kinoshita  
3rd Author's Affiliation Tokyo University of Science (Tokyo Univ. of Sci.)
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Speaker Author-1 
Date Time 2023-08-18 14:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2023-11 
Volume (vol) vol.123 
Number (no) no.155 
Page pp.6-9 
#Pages 4 
Date of Issue 2023-08-11 (ED) 

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