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Paper Abstract and Keywords
Presentation 2023-12-01 14:25
Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer
Ruka Watanabe, Kenta Kobayashi, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.) ED2023-32 CPM2023-74 LQE2023-72
Abstract (in Japanese) (See Japanese page) 
(in English) In the fabrication of vertical-cavity surface-emitting lasers (VCSELs), high controllability of the resonance wavelength, in other words cavity length, is essential. In GaAs-based VCSELs, an in-situ reflectivity spectra measurement during the epitaxial growth have been reported as a useful tool for the precise cavity length control. The use of this tool is also expected to improve the controllability of GaN-based VCSELs, and this research group reported the cavity length control of GaN-based VCSELs with the above measurement. On the other hand, there are ITO electrode and Nb2O5 spacer formed in the subsequent process steps in that cavity, and in-situ reflectivity spectra measurements during epitaxial growth is insufficient. In this report, we first deposited ITO or Nb2O5 on GaN cavity samples controlled by in-situ reflectivity spectra measurements to obtain the thickness dependence of the resonance wavelength shift, in other words the information including the refractive index. Next, we fabricated a GaN-based VCSEL with a 4λ cavity including ITO electrode and Nb2O5 spacer based on a layer design using the derived refractive index. As a result, we demonstrated room-temperature continuous operation of a GaN-based VCSEL with a difference from the designed resonance wavelength of less than 0.3% and an optical output power of 11 mW.
Keyword (in Japanese) (See Japanese page) 
(in English) semiconductor / VCSEL / cavity length control / in-situ reflectivity spectra measurement / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 290, LQE2023-72, pp. 80-83, Nov. 2023.
Paper # LQE2023-72 
Date of Issue 2023-11-23 (ED, CPM, LQE) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2023-32 CPM2023-74 LQE2023-72

Conference Information
Committee LQE ED CPM  
Conference Date 2023-11-30 - 2023-12-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2023-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer 
Sub Title (in English)  
Keyword(1) semiconductor  
Keyword(2) VCSEL  
Keyword(3) cavity length control  
Keyword(4) in-situ reflectivity spectra measurement  
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1st Author's Name Ruka Watanabe  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Kenta Kobayashi  
2nd Author's Affiliation Meijo University (Meijo Univ.)
3rd Author's Name Mitsuki Yanagawa  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Tetsuya Takeuchi  
4th Author's Affiliation Meijo University (Meijo Univ.)
5th Author's Name Satoshi Kamiyama  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Motoaki Iwaya  
6th Author's Affiliation Meijo University (Meijo Univ.)
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Speaker Author-1 
Date Time 2023-12-01 14:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2023-32, CPM2023-74, LQE2023-72 
Volume (vol) vol.123 
Number (no) no.288(ED), no.289(CPM), no.290(LQE) 
Page pp.80-83 
#Pages 4 
Date of Issue 2023-11-23 (ED, CPM, LQE) 

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